BR24G512F-3AGTE2

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G512-3A General Description BR24G512-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max)  All controls available by 2 ports of serial clock (SCL) and serial data (SDA)  Other devices than EEPROM can be connected to the same port, saving microcontroller port  1.7V to 5.5V single power source operation most suitable for battery use  1.7V to 5.5V wide limit of operating voltage, possible 1MHz operation  Page Write Mode useful for initial value write at factory shipment  Self-timed Programming Cycle  Low Current Consumption  Prevention of Write Mistake  Write (Write Protect) Function added  Prevention of Write Mistake at Low Voltage  More than 1 million write cycles  More than 40 years data retention  Noise filter built in SCL / SDA terminal  Initial delivery state FFh Not Recommended for New Designs DIP-T8 SOP-J8 9.30mm x 6.50mm x 7.10mm 4.90mm x 6.00mm x 1.65mm SOP8 TSSOP-B8 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Figure 1. Page Write Number of Pages 128 Bytes Product number BR24G512-3A BR24G512-3A Capacity Bit Format Type Power Supply Voltage DIP-T8*1 BR24G512-3A BR24G512F-3A 512Kbit 64K×8 Package SOP8 1.7V to 5.5V BR24G512FJ-3A BR24G512FVT-3A SOP-J8 TSSOP-B8 *1 Not Recommended for New Designs. 〇Product structure: Silicon monolithic integrated circuit .www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays 1/30 TSZ02201-0R2R0G100360-1-2 11.Jun.2019 Rev.005 BR24G512-3A Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Rating Unit Vcc -0.3 to +6.5 V Supply Voltage Remark 0.45 (SOP8) Power Dissipation Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8) Pd 0.33 (TSSOP-B8) 0.80 Derate by 4.5mW/°C when operating above Ta=25°C W Derate by 3.3mW/°C when operating above Ta=25°C (DIP-T8(1)) Derate by 8.0mW/°C when operating above Ta=25°C Storage Temperature Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to Vcc+1.0 V The Max value of Input voltage/Output voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input voltage/Output voltage is not lower than -1.0V. Tjmax 150 °C Junction temperature at the storage condition VESD -4000 to +4000 V Input Voltage / Output Voltage Junction Temperature Electrostatic discharge voltage (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25°C, VCC=1.7V to 5.5V) Parameter Min 1,000,000 40 Write Cycles (2) Data Retention (2) Limit Typ - Max - Unit Times Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol Vcc VIN Rating 1.7 to 5.5 0 to Vcc Unit V DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc =1.7V to 5.5V) Parameter Symbol Limit Min Typ Max Unit Conditions Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V Input Low Voltage1 VIL1 -0.3(3) - +0.3Vcc V Output Low Voltage1 VOL1 - - 0.4 V Output Low Voltage2 VOL2 - - 0.2 V Input Leakage Current ILI -1 - +1 μA IOL=3.0mA, 2.5V≤Vcc≤5.5V (SDA) IOL=0.7mA, 1.7V≤Vcc