BR25L320F-WE2

Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) ●General Description BR25Lxxx-W series is a serial EEPROM of SPI BUS interface method. ●Packages W(Typ.) x D(Typ.) x H(Max.) ●Features „ High speed clock action up to 5MHz (Max.) „ Wait function by HOLD terminal „ Part or whole of memory arrays settable as read only memory area by program „ 1.8V to 5.5V single power source action most suitable for battery use „ Page write mode useful for initial value write at factory shipment „ Highly reliable connection by Au pad and Au wire „ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) „ Auto erase and auto end function at data rewrite „ Low current consumption ¾ At write action (5V) : 1.5mA (Typ.) ¾ At read action (5V) : 1.0mA (Typ.) ¾ At standby action (5V) : 0.1μA (Typ.) „ Address auto increment function at read action „ Write mistake prevention function ¾ Write prohibition at power on ¾ Write prohibition by command code (WRDI) ¾ Write prohibition by WP pin ¾ Write prohibition block setting by status registers (BP1, BP0) ¾ Write mistake prevention function at low voltage „ Data at shipment Memory array : FFh, status register WPEN, BP1, BP0 : 0 „ Data kept for 40 years „ Data rewrite up to 1,000,000 times ●Page write Number of pages Product number DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm SOP8 TSSOP-B8J 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 3.00mm x 6.40mm x 1.35mm 16Byte 32Byte BR25L010-W BR25L020-W BR25L040-W BR25L080-W BR25L160-W BR25L320-W BR25L640-W ●BR25L Series SOP8 SOP-J8 F FJ FV ● ● ● ● ● ● ● ● ● 1.8 ~ 5.5V ● 1.8 ~ 5.5V 1.8 ~ 5.5V Capacity Bit format Type Power source voltage 1Kbit 128 X 8 BR25L010-W 1.8 ~ 5.5V 2Kbit 256 X 8 BR25L020-W 1.8 ~ 5.5V 4Kbit 512 X 8 BR25L040-W 1.8 ~ 5.5V 8Kbit 1K X 8 BR25L080-W 1.8 ~ 5.5V 16Kbit 2K X 8 BR25L160-W 32Kbit 4K X 8 BR25L320-W 64Kbit 8K X 8 BR25L640-W ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 DIP-T8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J FVT FVM FVJ ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ○This product is not designed protection against radioactive rays 1/35 TSZ02201-0R2R0G100350-1-2 22.JAN.2013 Rev.002 Datasheet BR25Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Impressed voltage Permissible dissipation Storage temperature range Operating temperature range Terminal Voltage VCC Limits Unit -0.3 to +6.5 V Remarks 800 (DIP-T8) When using at Ta=25℃ or higher, 8.0mW to be reduced per 1℃. 450 (SOP8) When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃. 450 (SOP-J8) Pd When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃. mW 300 (SSOP-B8) 330 (TSSOP-B8) When using at Ta=25℃ or higher, 3.3mW to be reduced per 1℃. 310 (MSOP8) When using at Ta=25℃ or higher, 3.1mW to be reduced per 1℃. 310 (TSSOP-B8J) When using at Ta=25℃ or higher, 3.1mW to be reduced per 1℃. Tstg －65 to +125 ℃ Topr －40 to +85 ℃ ‐ -0.3 to Vcc+0.3 V ●Memory cell characteristics (Ta=25°C , Vcc=1.8V to 5.5V) Limits Parameter Min. Typ. Number of data rewrite times *1 When using at Ta=25℃ or higher, 3.0mW to be reduced per 1℃. Unit Max. 1,000,000 - - Times 40 - - Years Data hold years *1 *1 Not 100% TESTED ●Recommended Operating Ratings Parameter Symbol Unit Limits Power source voltage Vcc 1.8 to 5.5 Input voltage Vin 0 to Vcc ●Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Symbol Min. Input capacity *1 Output capacity *1 *1 V Max. CIN － 8 COUT － 8 Unit pF Conditions VIN=GND VOUT=GND Not 100% TESTED. ●Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.8V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. “H” input voltage1 VIH 0.7Vcc － Vcc+0.3 V 1.8V≦VCC≦5.5V “L” input voltage1 VIL -0.3 － 0.3Vcc V 1.8V≦VCC≦5.5V VOL1 0 － 0.4 V IOL=2.1mA(VCC=2.5V to 5.5V) “L” output voltage1 “L” output voltage2 VOL2 0 － 0.2 V IOL=150μA(VCC=1.8V to 2.5V) “H” output voltage1 VOH1 Vcc-0.5 － Vcc V IOH=-0.4mA(VCC=2.5V to 5.5V) “H” output voltage2 VOH2 Vcc-0.2 － Vcc V IOH=-100μA(VCC=1.8V to 2.5V) Input leak current ILI -1 － 1 μA VIN=0 to Vcc Output leak current ILO -1 － 1 μA ICC1 － － 1.0 mA ICC2 － － 2.0 mA ICC3 － － 3.0 mA ICC4 － － 1.5 mA ICC5 － － 2.0 mA ISB － － 2 μA Current consumption at write action Current consumption at read action Standby current www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 2/35 VOUT=0 to Vcc, CS=VCC Vcc=1.8V, fSCK=2MHz, tE/W=5ms Byte write, Page write, Write status register Vcc=2.5V, fSCK=5MHz, tE/W=5ms Byte write, Page write, Write status register Vcc=5.5V, fSCK=5MHz, tE/W=5ms Byte write, Page write, Write status register Vcc=2.5V, fSCK=5MHz Read, Read status register Vcc=5.5V, fSCK=5MHz Read, Read status register Vcc=5.5V,SO=OPEN CS=HOLD=WP=Vcc, SCK=SI=Vcc or =GND TSZ02201-0R2R0G100350-1-2 22.JAN.2013 Rev.002 Datasheet BR25Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) ●Operating timing characteristics (Ta=-40°C to +85°C, unless otherwise specified, load capacity CL1 100pF) 1.8V≦Vcc