DTC115T series
Datasheet
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
l Outline
Parameter
VCEO
Value
IC
100mA
R1
100kΩ
EMT3
DTC115TM
(SC-105AA)
l Features
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary PNP Types: DTA115T series
6) Lead Free/RoHS Compliant.
SMT3
DTC115TUA
SOT-323(SC-70)
l Inner circuit
R
B: BASE
C: COLLECTOR
E: EMITTER
ot
N
Part No.
DTC115TKA
SOT-346(SC-59)
l Packaging specifications
DTC115TM
DTC115TE
DTC115TUA
DTC115TKA
DTC115TE
SOT-416(SC-75A)
UMT3
l Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
or
50V
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Package
Package
size
Taping
code
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
T2L
TL
T106
T146
Reel size Tape width
(mm)
(mm)
180
180
180
180
8
8
8
8
Basic
ordering
unit.(pcs)
Marking
8000
3000
3000
3000
09
09
09
09
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© 2012 ROHM Co., Ltd. All rights reserved.
1/7
20121023 - Rev.001
DTC115T series
Datasheet
l Absolute maximum ratings (Ta = 25°C)
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
or
Parameter
IC
Collector current
100
150
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DTC115TM
mA
Power dissipation
DTC115TE
150
PD*1
DTC115TUA
mW
200
DTC115TKA
200
Junction temperature
Range of storage temperature
Tj
150
℃
Tstg
-55 to +150
℃
l Electrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
BVCBO
IC = 50μA
50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 50μA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
μA
Emitter cut-off current
IEBO
VEB = 4V
-
-
0.5
μA
VCE(sat)
IC / IB = 1mA / 0.1mA
-
-
0.3
V
hFE
VCE = 5V, IC = 1mA
100
250
600
-
70
100
130
kΩ
-
250
-
MHz
ot
R
Collector-base breakdown
voltage
Collector-emitter saturation voltage
N
DC current gain
Input resistance
R1
Transition frequency
f T*2
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
20121023 - Rev.001
DTC115T series
Datasheet
l Electrical characteristic curves(Ta=25℃ )
Fig.2 Grounded emitter output characteristics
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Fig.1 Grounded emitter propagation characteristics
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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Fig.3 DC Current gain vs. Collector Current
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© 2012 ROHM Co., Ltd. All rights reserved.
3/7
20121023 - Rev.001
DTC115T series
Datasheet
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l Dimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
4/7
20121023 - Rev.001
DTC115T series
Datasheet
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www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/7
20121023 - Rev.001
DTC115T series
Datasheet
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www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
6/7
20121023 - Rev.001
DTC115T series
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
7/7
20121023 - Rev.001
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