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IMD10AT108

IMD10AT108

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOT457

  • 描述:

    带预偏置三极管 NPN,PNP SOT457 Ic=100mA,500mA VCEO=50V

  • 数据手册
  • 价格&库存
IMD10AT108 数据手册
IMD10A Power management (dual digital transistors) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. Datasheet Dimensions (Unit : mm) (4) (5) (6) (3) (2) (1) Package, marking, and packaging specifications Part No. IMD10A Package Marking Code Basic ordering unit (pieces) SMT6 D10 T108 3000 SOT-457 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Absolute maximum ratings (Ta=25C) (4) (5) (6) R2 R1 DTr1 DTr2 R1 (3) (2) (1) Equivalent circuit DTr1 Parameter Symbol Limits Unit VCC VIN IC −50 −5 to +5 −500 V V mA Symbol Limits Unit VCBO VCEO 50 50 5 100 V V V mA Limits 300(TOTAL) Unit 150 °C °C Supply voltage Input voltage Collector current DTr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VEBO IC Total Parameter Symbol Power dissipation Junction temperature Pd Tj Storage temperature Tstg ∗ −55 to +150 mW ∗ 200mW per element must not be exceeded. www.rohm.com c 2013 ROHM Co., Ltd. All rights reserved. ○ 1/2 2013.11 - Rev.C Datasheet IMD10A Electrical characteristics (Ta=25C) DTr1 Symbol Parameter Min. − −1.5 − − − VI(off) VI(on) VO(on) II Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio IO(off) GI 68 − fT Typ. − − −0.1 − − − Max. R2 / R1 70 80 200 100 100 Symbol Min. Typ. Max. BVCBO BVCEO 50 50 5 − − − − − − − − − R1 Unit −0.3 − −0.3 −25 −0.5 − − Conditions − − − − − − − − IO= −100mA , VO= −5V VCE= −10V , IE=50mA , f=100MHz − − VCC= 5V , IO= 100μA VO= 0.3V , IO= 100mA IO= 100mA , II= 5mA VI= 2V VCC= 50V , VI=0V V V mA μA − MHz Ω 130 120 − ∗ Transition frequency of the device. ∗ DTr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance BVEBO ICBO − − − IEBO VCE(sat) hFE fT 100 R1 7 − Unit 0.5 0.5 0.3 600 250 250 10 Conditions IC=50μA IC=1mA V V V μA μA V IE=50μA VCB=50V VEB=4V IC=10mA , IB=1mA VCE=5V , IC=1mA − − MHz kΩ 13 VCE=10V , IE= ∗ Transition frequency of the device. −5mA , f=100MHz − ∗ Electrical characteristic curves 100 50 20 10 5 −200m −50m −20m −10m −5m −1m −500μ −1m −5m −10m −20m −50m −100m−200m −500m OUTPUT CURRENT : IO (A) −5m −10m −20m −50m −100m −200m 1k −2m Ta=100°C 25°C −40°C −50μ −20μ −10μ −5μ −1 −2 −5 −2 Ta= −40°C 25°C 100°C −1 −500m −100m −500μ −1m −2m −500m −3 INPUT VOLTAGE : VI(off) (V) Fig.4 Output current vs. Input voltage (OFF characteristics) www.rohm.com c 2013 ROHM Co., Ltd. All rights reserved. ○ 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. Collector current 2/2 −5m −10m −20m −50m −100m −200m −500m OUTPUT CURRENT : IO (A) VCE=5V 500 −1m −500μ DC CURRENT GAIN : hFE OUTPUT CURRENT : Io (A) −2m Fig.2 Output voltage vs. Output current characteristics VCC=−5V −5m −10 OUTPUT CURRENT : IO (A) Fig.1 DC current gain vs. Output current characteristics −10m −20 −200m Fig.3 Input voltage vs. Output current (ON characteristics) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1 −500μ −1m −2m −2μ −1μ 0 Ta=100°C 25°C −40°C −100m VO = −0.3V −50 −2m 2 −200μ −100μ −100 IO/II=20/1 −500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 200 −1 VO = −5V Ta=100°C 25°C −40°C INPUT VOLTAGE : VI(on) (V) 1k 500 1 lC/lB=10 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. Collector current 2013.11 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R1102A
IMD10AT108 价格&库存

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