MMST2222A

UMT2222A / SST2222A / MMST2222A / PN2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A / PN2222A !Features 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A / PN2907A. !External dimensions (Units : mm) UMT2222A 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1 1.25±0.1 2.1±0.1 0 ∼ 0.1 (3) ROHM : UMT3 EIAJ : SC-70 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) (1) Emitter (2) Base (3) Collector !Package, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2222A UMT3 R1P T106 3000 SST2222A MMST2222A SST3 R1P T116 3000 SMT3 R1P T146 3000 PN2222A TO-92 − T93 3000 SST2222A 0.95 +0.2 −0.1 0.45±0.1 2.4±0.2 1.3+0.2 −0.1 0 ∼ 0.1 0.2Min. 0.1 ∼ 0.4 (3) ROHM : SST3 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 1.1+0.2 −0.1 0.8±0.1 (1) Emitter (2) Base (3) Collector MMST2222A !Absolute maximum ratings (Ta = 25°C) (3) 1.6+0.2 −0.1 2.8±0.2 0 ∼ 0.1 Junction temperature Storage temperature ∗ When mounted on a 7 x 5 x 0.6 mm ceramic board Tj Tstg 0.35 0.625 150 −55 ∼ +150 W W °C °C (12.7Min.) UMT2222A,SST2222A, MMST2222A Collector power SST2222A dissipation PN2222A 4.8±0.2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO IC 75 40 6 0.6 0.2 V V V A W +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 4.8±0.2 3.7±0.2 PN2222A PC ∗ 2.5Min. 0.5±0.1 (1) (2) (3) 5 +0.3 2.5 −0.1 0.3 ∼ 0.6 Parameter Symbol Limits Unit ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 + 0.45 −0.15 0.05 2.3 (1) Emitter (2) Base (3) Collector !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. 75 40 6 − − − − 0.6 − 35 DC current transfer ratio hFE 50 75 50 100 Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf 40 300 − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − − Max. − − − 100 100 0.3 1 1.2 2 − − − − 300 − − 8 25 10 25 225 60 MHz pF pF ns ns ns ns − Unit V V V nA nA V V IC =10µA IC =10mA IE =10µA VCB = 60V VEB = 3V IC/IB =150mA/15mA IC/IB =500mA/50mA IC/IB =150mA/15mA IC/IB =500mA/50mA VCE =10V , IC =0.1mA VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA VCE =10V , IC =150mA VCE =10V , IC =500mA VCE =20V , IC =−20mA, f =100MHz VCB =10V , f =100kHz VEB =0.5V , f =100kHz VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA Conditions UMT2222A / SST2222A / MMST2222A / PN2222A Transistors !Electrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 600 500 400 1000 Ta=25°C DC CURRENT GAIN : hFE VCE=10V 50 300 200 100 100 1V 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) IB=0µA 10 0.1 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.1 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current(Ι) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Ta=25°C IC / IB=10 0.3 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125°C 0.2 25°C −55°C 100 0.1 0 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 0.1 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.2 Collector-emitter saturation voltage vs. collector current Fig.4 DC current gain vs. collector current(ΙΙ) BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 1000 1.8 1.6 Ta=25°C VCE=10V f=1kHz Ta=25°C IC / IB=10 AC CURRENT GAIN : hFE 1.2 100 0.8 0.4 10 0.1 0 1.0 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.5 AC current gain vs. collector current Fig.6 Base-emitter saturation voltage vs. collector current UMT2222A / SST2222A / MMST2222A / PN2222A Transistors BASE EMITTER VOLTAGE : VBE(ON)(V) 1.8 1.6 Ta=25°C VCE=10V 1000 Ta=25°C IC / IB=10 500 Ta=25°C VCC=30V IC / IB=10 TURN ON TIME : ton(ns) 1.2 100 VCC=30V 10V 0.8 0.4 RISE TIME : tr(ns) 100 10 0 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 5 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Turn-on time vs. collector current Fig.9 Rise time vs. collector current 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 100 Ta=25°C f=1MHz STORAGE TIME : Ts(ns) CAPACITANCE(pF) FALL TIME : tf(ns) Cib 100 100 10 Cob 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.10 Storage time vs. collector current Fig.11 Fall time vs. collector current Fig.12 Input / output capacitance vs. voltage 100 COLLECTOR-EMITTER VOLTAGE : VCE(V) 100MHz 250MHz 300MHz 200MHz 10 1 250MHz 0.1 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 1000 Ta=25°C VCE=10V 100 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.13 Gain bandwidth product Fig.14 Gain bandwidth product vs. collector current