RB050L-60

Data Sheet Schottky barrier diode RB050L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 Features 1)Small power mold type. (PMDS) 2)Low IR 3)High reliability ① ② 0.1±0.02 　　　 0.1 5.0±0.3 4 3 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 Structure Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106   Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 4.2 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Limits Symbol VRM Reverse voltage (repetitive) 60 VR Reverse voltage (DC) 60 Average rectified forward current (*1) 3 Io Average rectified forward current (*2) 2 Io IFSM Forward current surge peak (60Hz ・1cyc) 70 Junction temperature 150 Tj Storage temperature 40 to 150 Tstg (*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX (*2) On the Glass epoxy substrate, half sine wave at 180° Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF 1 VF2 IR Absolute maximum ratings (Ta=25°C) Parameter Unit V V A A A °C °C Min. - Typ. - Max. 0.52 0.56 100 Unit V V A Conditions IF=2.0A IF=3.0A VR=60V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5.3±0.1 　 0.05 9.5±0.1 1/3 12±0.2 2011.04 - Rev.A RB050L-60 　 Data Sheet 10 Ta=25C Ta=75 C 10000 1000 100 10 1 0.1 0.01 0.001 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125 C Ta=-25 C Ta=75 C Ta=25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 C f=1MHz 100 0.1 10 Ta=-25 C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.52 100 650 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 0.51 0.5 0.49 0.48 0.47 0.46 AVE:0.4884V CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 C IF=3A n=50pcs 90 80 70 60 50 40 30 20 10 0 Ta=25 C VR=60V n=50pcs AVE：25.93μA 640 630 620 610 600 590 580 570 560 550 AVE:597.5pF Ta=25 C f=1MHz VR=0V n=20pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 300 50 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 AVE:207.4A 40 30 20 AVE：25.6ns 10 0 Ta=25 C IF=0.1A IR=0.1A Irr=0.1IR n=20pcs 300 250 200 150 100 50 0 1 Ifsm 8.3ms8.3ms 1cyc Ifsm 1cyc 8.3ms IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃ /W) 5 Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 100 100 Rth(j-c) IM=100mA IF=100mA 4 3 2 1 0 D=1/2 Sin(θ＝180) DC 10 10 Ifsm t 1 1ms 300us time 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.1 10 1000 0 1 2 3 4 5 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A RB050L-60 　 Data Sheet 0.6 0.5 5.0 4.5 7 VR D=t/T VR=30V Tj=150 C 0A 0V DC t Io VR D=t/T VR=30V T Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 REVERSE POWER DISSIPATION:PR (W) t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 0A 0V Io 6 5 4 3 2 1 0 Sin(θ＝180) 0.4 0.3 0.2 0.1 0 0 10 20 30 40 Sin(θ＝180) 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D=1/2 D=1/2 DC Sin(θ＝180) D=1/2 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve'(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve'(Io-Tc) 30 25 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:13.02kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A