RB168VWM150
Data sheet
Schottky Barrier Diode
● Outline
VR
150
V
Io
1
A
IFSM
25
A
● Features
● Inner Circuit
High reliability
Small power mold type
Ultra low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
TR
Marking
LB
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
150
150
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=155℃ Max.
1
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
25
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
175
-55 ~ 175
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+3.754461+0.45668
- 10+2.8118210+0.34202
- 50+1.7805550+0.21658
- 100+1.31326100+0.15974
- 500+0.84597500+0.10290
- 1000+0.749281000+0.09114
- 2000+0.700942000+0.08526
- 4000+0.692894000+0.08428
- 国内价格
- 50+2.71489
- 100+2.63471
- 250+2.55452
- 1000+2.47850
- 国内价格
- 25+2.79924
- 50+2.71489
- 100+2.63471
- 250+2.55452
- 1000+2.47850