RB228NS100

Data Sheet Schottky Barrier Diode RB228NS100 Applications Switching power supply Dimensions (Unit : mm) Land size figure (Unit : mm) RB2281 NS100 Features 1)Cathode common type. 2)Low IR 3)High reliability ① Construction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day Structure ①②③ Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Limits 110 100 30 100 150 40 to 150 Junction temperature Storage temperature (*1) Rating of per diode : Io/2 VRM VR Io IFSM Tj Tstg Unit V V A A C C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Thermal impedance VF IR θjc Min. - Typ. - Max. 0.87 0.15 2.00 Unit V mA °C/W IF=5A VR=100V Conditions junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RB228NS100 　 Data Sheet 100 1000000 Ta=150°C Ta=125°C 10 FORWARD CURRENT:IF(A) Ta=75°C Ta=125°C REVERSE CURRENT:IR(nA) 100000 10000 Ta=75°C 1 Ta=150°C 0.1 Ta=25°C 0.01 Ta=-25°C 0.001 100 200 300 400 500 600 700 800 900 1000 Ta=25°C 100 Ta=-25°C 10 1 0 10 20 30 40 50 60 70 80 90 100 110 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 770 Ta=25°C IF=5A n=30pcs 760 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 750 100 740 AVE:731.5mV 730 10 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 720 VF DISPERSION MAP 400 Ta=25°C VR=100V n=30pcs 600 590 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 580 570 560 550 540 530 520 510 AVE:514.4pF Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 300 AVE:151nA 200 100 0 IR DISPERSION MAP 500 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RB228NS100 　 Data Sheet 400 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 350 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 300 15 AVE:8.2ns 10 AVE:231A 250 5 200 IFSM DISPERSION MAP 0 trr DISPERSION MAP 300 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 250 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 IFSM t 1cyc 200 100 150 100 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 100 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 60 50 D=1/2 FORWARD POWER DISSIPATION:Pf(W) 10 Rth(j-a) 40 Sin(θ＝180) 30 1 Rth(j-c) 20 DC 10 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RB228NS100 　 Data Sheet 0.02 80 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t T Io VR D=t/T VR=50V Tj=150°C 0.015 REVERSE POWER DISSIPATION:PR (W) 60 50 40 D=1/2 30 20 10 Sin(θ＝180) DC DC 0.01 D=1/2 0.005 Sin(θ＝180) 0 0 10 20 30 40 50 60 70 80 90 100 0 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 80 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 DC 50 40 30 20 Sin(θ＝180) 10 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) D=1/2 0A 0V t T Io D=t/T VR=50V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) VR 30 25 20 AVE:10.9kV 15 AVE:3.9kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A