RB420D_11

Data Sheet Shottky barrier diode RB420D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 2.8±0.2 1.6－0.1 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.15 －0.06 (3) ＋0.2 1.0MIN. ＋0.1 0.95 0.8MIN. 0～0.1 0.3～0.6 (2) (1) 0.95 0.8±0.1 0.2 1.1±0.2 1.1 0.1 0.01 SMD3 Construction Silicon epitaxial planar 0.95 1.9±0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz 1cyc) (*1) ・ Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 100 1 125 40 to 125 Unit V V mA A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 IR1 Ct1 Min. - Typ. 6 Max. 0.45 1 - Unit V μA pF Conditions IF=10mA VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D 2.4 2.9±0.2 各リードとも 同寸法 0.4 ＋0.1 Each lead has same dimension 　－0.05 RB420D Data Sheet 100 100 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=125℃ 1 Ta=25℃ Ta=-25℃ 1 0.1 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=75℃ 10 Ta=75℃ 10 Ta=-25℃ 0.01 0.001 0.1 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 10 15 20 25 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 500 30 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 380 370 360 AVE:425.2mV AVE:370.9mV Ta=25℃ Ta=25℃ IF=1A IF=10mA n=30pcs n=10pcs 400 300 200 100 0 AVE:98.96nA Ta=25℃ VR=10V n=30pcs 25 20 15 10 5 AVE:5.81pF 0 Ta=25℃ f=1MHz VR=10V n=10pcs 350 σ:1.6771mV VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 15 15 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 t 10 8.3ms 8.3ms 1cyc 10 5 5 AVE:5.5A 0 5 0 0.1 IFSM DISRESION MAP 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 0.1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 1000 0.1 Rth(j-a) 0.08 Rth(j-c) Mounted on epoxy board 0.003 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) D=1/2 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 100 0.002 D=1/2 DC 0.001 Sin(θ＝180) 0.06 Sin(θ＝180) DC 10 IM=1mA IF=10mA 0.04 0.02 1ms time 300us 1 0.001 0.1 10 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 30 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.D RB420D Data Sheet 0.3 0.25 0A 0V DC 0.15 0.1 0.05 0 0 25 50 75 100 125 Sin(θ＝180) D=1/2 Io VR D=t/T VR=20V Tj=125℃ 0.3 0.25 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.2 T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 0.2 0.15 0.1 0.05 0 0 Sin(θ＝180) 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A