RB481Y-40

Data Sheet Schottky Barrier Diode RB481Y-40 lApplications Rectifying small power lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.5 1.6±0.1 1.6±0.1 0.22±0.05 0 .13±0.05 (3) 0.45 1.2±0.1 3)High reliability. 11.6±0.1 .6±0.05 lFeatures 1)Ultra small mold type. (EMD4) 2)Low VF (4) 1.0 0～0.1 EMD4 lConstruction Silicon epitaxial planar (1) 0.5 1.0±0.1 0.5 (2) lStructure 0.5±0.05 ROHM : EMD4 JEITA : SC-75A Size week code 1Pin Mark lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 40 VR Reverse voltage (DC) 40 Average rectified forward current (*1) 200 Io IFSM Forward current surge peak (60Hz・1cyc) (*2) 1 Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1) Rating of per diode:1/2 Io (*2) Rating of per diode lElectrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF1 VF2 IR1 IR2 Unit V V mA A C C Min. - Typ. - Max. 0.3 0.45 20.0 90.0 Unit V V μA μA IF=10mA IF=100mA VR=10V VR=40V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.55 RB481Y-40 　 Data Sheet 1000 100000 10000 REVERSE CURRENT:IR(mA) 1000 100 Ta=150°C Ta=125°C Ta=150°C FORWARD CURRENT:IF(mA) 100 Ta=125°C Ta=75°C Ta=25°C Ta=75°C Ta=25°C 10 1 0.1 0.01 10 Ta=-25°C Ta=-25°C 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz FORWARD VOLTAGE:VF(mV) 420 Ta=25°C IF=100mA n=30pcs 410 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 10 390 AVE:397.1mV 380 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 370 VF DISPERSION MAP 100 90 REVERSE CURRENT:VR(mA) 80 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:6.86mA Ta=25°C VR=40V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 29 28 27 26 25 24 23 22 21 20 Ct DISPERSION MAP AVE:27.2pF Ta=25°C f=1MHz VR=0V n=10pcs www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB481Y-40 　 Data Sheet 20 1cyc 20 Ta=25°C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 15 REVERSE RECOVERY TIME:trr(ns) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 15 10 10 AVE:6.5ns 5 AVE:5.60A 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 10 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 10 IFSM time 1cyc 5 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.3 0.25 D.C. FORWARD POWER DISSIPATION:Pf(W) 0.2 D=1/2 Sin(θ＝180) 0.15 100 Rth(j-c) 0.1 0.05 10 0.001 0 0.01 0.1 1 10 100 1000 0 0.05 TIME:(s) Rth-t CHARACTERISTICS 0.1 0.15 0.2 0.25 0.3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.35 0.4 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB481Y-40 　 Data Sheet 0.35 0.5 0A 0.4 AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0V t D.C. T 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 Io VR D=t/T VR=20V Tj=125°C 0.3 REVERSE POWER DISSIPATION:PR (w) 0.25 0.2 D.C. 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 10 20 30 40 0 25 50 75 100 125 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE：Ta(°C) DERATING CURVE(Io-Ta) 0 0.5 0A 0V t Io VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=20V Tj=125°C 25 0.4 AVERAGE RECTIFIED FORWARD CURRENT Io(A) T D.C. 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 20 AVE:21.42kV 15 10 5 AVE:2.25kV 0 0 25 50 75 100 125 CASE TEMPERATURE：Tc(°C) DERATING CURVE(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A