RB495D_11

Data Sheet Schottky Barrier Diode RB495D  Applications General rectification.  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.9 2.9±0.2 各 リー ドと も Each lead has same dimension 同寸 法 0.15 －0.06 0.4 　－0.05 ＋0.1  Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability 2.8±0.2 1.6－0.1 ＋0.2 1.0MIN. (3) 0.95 0～ 0.1 0.3～0.6 (2) 0.95 0.95 1.9±0.2 (1) 0.8±0.1 1.1±0.2 0.01 SMD3 0.8MIN.  Construction Silicon epitaxial planar  Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode : lo/2 Symbol VRM VR Io IFSM Tj Tstg Limits 40 25 0.4 2 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF 1 VF 2 IR1 Min. - Typ. - Max. 0.30 0.50 70 Unit V V μA IF=10mA IF=200mA VR=25V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 2.4 ＋0.1 RB495D Data Sheet 1 Ta=75℃ 100000 Ta=125℃ 100 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 1000 100 10 1 0.1 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 35 40 10000 10 Ta=-25℃ 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 380 200 100 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 0 AVE:33.62uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 360 350 340 AVE:359.0mV 330 Ta=25℃ IF=200mA n=30pcs 180 160 Ta=25℃ VR=25V n=30pcs 95 90 85 80 75 70 65 60 55 50 AVE:71.8pF Ta=25℃ f=1MHz VR=0V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 30 25 20 15 10 5 AVE:8.6ns 0 trr DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 15 8.3ms 8.3ms 1cyc 10 5 AVE:12.50A 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 20 1000 0.3 Per chip Rth(j-a) Ifsm 15 t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-c) 0.2 D=1/2 10 Mounted on epoxy board Sin(θ＝180) 0.1 DC 10 IM=1mA time IF=10mA 5 1ms 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RB495D Data Sheet 1 Per chip 0.5 Per chip 0.4 DC 0.3 D=1/2 0.2 0.1 0 0 10 20 30 40 0 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 0.5 Per chip 0.4 DC 0.3 D=1/2 0.2 0.1 0 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.6 D=1/2 0.4 0.2 0 DC Sin(θ＝180) Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) Sin(θ＝180) 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A