RB705D_11

Data Sheet Shottky barrier diode RB705D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8MIN. 2.9±0.2 各リードとも 同寸法 0.4 ＋0.1 Each lead has same dimension 　－0.05 (3) 1.0MIN. 2.8±0.2 1.6－0.1 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.15 －0.06 ＋0.1 0.95 ＋0.2 1.9 0～0.1 0.3～0.6 SMD3 (2) (1) 0.95 0.8±0.1 0.2 1.1±0.2 1.1 0.1 0.01 Construction Silicon epitaxial planar 0.95 1.9±0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz 1cyc) (*1) ・ Junction temperature Storage temperature (*1) Rating of per diode : lo/2 Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 40 to 125 Unit V V mA mA °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 IR1 Ct1 Min. - Typ. 2.0 Max. 0.37 1 - Unit V μA pF Conditions IF=1mA VR=10V VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.B 2.4 RB705D Data Sheet 100 1000 10 Ta=125℃ Ta=75℃ f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 10 Ta=75℃ 10 1 0.1 1 Ta=-25℃ Ta=25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 1 0.1 Ta=-25℃ 0.01 0.001 0.01 0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 1 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 290 280 270 260 AVE:267.4mV 250 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.083nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs 0.9 Ta=25℃ VR=10V n=30pcs 9 8 7 6 5 4 3 2 1 0 AVE:2.00pF Ta=25℃ f=1MHz VR=1V n=10pcs VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms 9 8 7 6 5 4 3 2 1 0 Ifsm t 15 Ifsm 8.3ms 8.3ms 1cyc 10 10 5 AVE:7.30A 5 0 0 1 IFSM DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Rth(j-a) 0.04 0.003 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.03 D=1/2 100 Rth(j-c) Mounted on epoxy board 0.002 DC 0.001 Sin(θ＝180) D=1/2 0.02 Sin(θ＝180) DC 10 IM=1mA time IF=10mA 0.01 1ms 300us 1 0.001 0.00 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B RB705D Data Sheet 0.1 Per chip 0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 Sin(θ＝180) 0 0 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ Per chip 0.08 0.06 0.04 0.02 0 0 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ DC D=1/2 DC D=1/2 Sin(θ＝180) 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A