RB751SM-40

Data Sheet Schottky Barrier Diode RB751SM-40 lApplications High speed switching lDimensions (Unit : mm) 0.8±0.05 0 .12±0.05 lLand size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability 0.6 EMD2 lConstruction Silicon epitaxial 0.3±0.05 0.6±0.1 lStructure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 40 30 30 200 150 -40 to +150 Unit V V mA mA °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals IR Ct Min. - Typ. 2 Max. 0.37 0.5 - Unit V μA pF IF=1mA Conditions VR=30V VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1.7 RB751SM-40 　 Data Sheet 100 Ta=125℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1000 100 10 1 0.1 0.01 Ta=125℃ 10 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ Ta=75℃ Ta=25℃ 1 Ta=-25℃ 0.01 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 0.001 0 10 20 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 320 FORWARD VOLTAGE:VF(mV) 310 300 290 280 AVE:282.4mV 270 260 250 Ta=25℃ IF=1mA n=30pcs 1000 900 REVERSE CURRENT:IR(nA) 800 700 600 500 400 300 200 100 0 AVE:245.2nA Ta=25℃ VR=30V n=30pcs 10 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP AVE:2.1pF Ta=25℃ f=1MHz VR=1V n=10pcs VF DIPERSION MAP Ct DISPERSION MAP 20 REVERSE RECOVERY TIME:trr(ns) Ifsm 15 8.3ms 10 1cyc 30 25 20 15 AVE:7.7ns 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP IF=0.1A IR=0.1A Irrr=0.1*IR 10 Ifsm 8.3ms 8.3ms 1cyc 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 5 AVE:3.24A PEAK SURGE FORWARD CURRENT:IFSM(A) 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) 0.05 0.04 FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.03 Sin(θ＝180) 10 100 Rth(j-c) 0.02 DC 0.01 5 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 10 0.001 0.00 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB751SM-40 　 Data Sheet 0.01 0.1 0A 0V t 0.06 DC D=1/2 T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.10 0A 0.08 0V t 0.06 DC D=1/2 T Io VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.008 0.08 VR D=t/T VR=15V Tj=150℃ 0.006 D=1/2 0.004 Sin(θ＝180) 0.002 DC 0.04 0.04 0.02 Sin(θ＝180) 0 0.02 Sin(θ＝180) 0.00 0 0 10 20 30 0 25 50 75 100 125 150 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) 5 ELECTROSTATIC DISCHARGE TEST ESD(KV) 4.5 4 3.5 3 2.5 2 AVE:0.418kV 1.5 1 0.5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:3.34kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A