RBLQ20BGE10TL

RBLQ20BGE10 Data sheet Schottky Barrier Diode 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline VR 100 V Io 20 A IFSM 150 A 　 　 　 　 　 　 　 　 　 　 　 　 　　　 ● Features ● Inner Circuit High reliability Power mold type Low V F and low IR Low capacitance ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 Quantity(pcs) 2500 Taping Code TL Marking RBLQ20BM10 Switching power supply Freewheel diode Reverse polarity protection ● Structure Trench MOS structure ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 100 V Reverse voltage VR Reverse direct voltage 100 V Average rectified forward current Io 60Hz half sin waveform，resistive load， Tc=105℃Max. 20 A IFSM 60Hz half sin waveform，non-repetitive， Ta=25℃ 150 A Tj - 150 ℃ Tstg - -55 ～ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj