RBQ10B65A

Data Sheet Schottky Barrier Diode RBQ10B65A Applications General rectification Dimensions (Unit : mm) 6.5±0.2 C0.5 1.5±0.3 2.3±0.2 0.1 0.5±0.1 5.1±0.2 0.1 Land size figure (Unit : mm) 6.0 5.5±0.3 0.1  0.8 min 0.9 （1） （2） （3） 2.3±0.2 2.3±0.2 0.75 0.65±0.1 2.5 3)High reliability 0.5±0.1 1.0±0.2 CPD 2.3 2.3 Construction Silicon epitaxial planer Structure ROHM : CPD JEITA : SC-63  Manufacture Date 　　　　Taping specifications (Unit : mm) Absolute maximum ratings（Tc=25°C） Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （60Hz・1cyc）（*2） Junction temperature Tj Storage temperature Tstg (*1)　Business frequencies, 1/2 Io per diode. (*2)　Per diode. Electrical characteristics（Tj=25°C） Parameter Symbol VF Forward voltage Reverse current IR Limits 65 65 10 50 150 −40 to +150 Unit V V A A °C °C Min. - Typ. - Max. 0.69 0.15 Unit V mA IF=5A VR=65V Conditions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3.0 Features 1)Power mold type. (CPD) 2)Low IR 9.5±0.5 1.6 1.6 2.0 6.0 1/4 2012.01 - Rev.A RBQ10B65A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(µA) Ta=125°C FORWARD CURRENT:IF(A) 1 Ta=150°C 1000 Ta=125°C 100 Ta=75°C Ta=75°C 0.1 Ta=25°C 10 1 Ta=25°C 0.1 Ta=−25°C 0.01 0 100 200 300 400 500 600 700 800 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=−25°C FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD VOLTAGE:VF(mV) 700 690 680 670 660 650 640 630 620 610 AVE:629.1mV Ta=25°C IF=5A n=30pcs 100 10 1 0 5 10 15 20 25 30 600 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25°C VR=65V n=30pcs 450 440 430 420 410 400 390 380 370 360 350 IR DISPERSION MAP Ct DISPERSION MAP AVE:396pF Ta=25°C f=1MHz VR=0V n=10pcs 40 REVERSE CURRENT:IR(µA) 30 20 AVE:12.57µA 10 0 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.01 - Rev.A RBQ10B65A 　 Data Sheet 300 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 8.3ms 200 REVERSE RECOVERY TIME:trr(ns) 250 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 25 20 150 15 100 AVE:130A 10 AVE:7.5ns 50 5 0 0 IFSM DISPERSION MAP trr DISPERSION MAP 300 Ifsm 250 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 200 8.3ms 1cyc 300 250 Ifsm 200 t 150 150 100 100 50 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 15 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) FORWARD POWER DISSIPATION:Pf(W) 10 Rth(j-a) 10 D=1/2 Rth(j-c) Sin(θ＝180) 5 DC 1 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/4 2012.01 - Rev.A RBQ10B65A 　 Data Sheet 2 25 0A 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V t T D=1/2 10 DC VR D=t/T VR=30V Tj=150°C Io 1.5 REVERSE POWER DISSIPATION:PR (W) 15 1 DC 0.5 Sin(θ＝180) D=1/2 5 Sin(θ＝180) 0 0 10 20 30 40 50 60 70 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 0A 0V 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC T 15 D=1/2 10 t Io VR D=t/T VR=30V Tj=150°C 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 AVE:12.3kV 10 5 Sin(θ＝180) 5 AVE:2.9kV 0 0 25 50 75 100 125 150 0 C=200pF R=0Ω C=100pF R=1.5kΩ CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. 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