RBR10BM40AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
40
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BR10BM40A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
40
V
Reverse voltage
VR
Reverse direct voltage
40
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=90℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 50+4.85806
- 100+3.85312
- 250+3.77502
- 1000+3.70004
- 国内价格 香港价格
- 1+17.103481+2.07368
- 10+5.0680010+0.61446
- 50+3.4595050+0.41944
- 100+2.92602100+0.35476
- 500+2.57037500+0.31164
- 1000+2.497631000+0.30282
- 2000+2.441052000+0.29596
- 4000+2.400634000+0.29106
- 国内价格 香港价格
- 1+8.173221+0.98898
- 10+6.6671910+0.80675
- 100+5.18336100+0.62720
- 500+4.39358500+0.53164
- 1000+3.579091000+0.43308