RDS070N03

RDS070N03 Transistors Switching (30V, 7A) RDS070N03 Features 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. External dimensions (Units : mm) + 0.4− 0.1 0.1 1.27 0.15 + 1.5− 0.1 Max.1.75 + 5.0− 0.2 (5) (4) Structure Silicon N-channel MOS FET (8) + 3.9− 0.15 + 6.0− 0.3 + 0.5− 0.1 (1) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) ∗ (1) (2) (3) ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain Absolute maximum ratings (Ta = 25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 7 28 7 28 1.6 Unit V V A A A A A A W °C °C 6.4 2.5 150 −55~+150 Total Power Dissipation(Tc=25°C) Channel Temperature Storage Temperature ∗Pw≤10µs, Duty cycle≤1% + 0.2− 0.1 Each lead has same dimensions RDS070N03 Transistors Thermal resistance (Ta = 25°C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit °C/W Electrical characteristics (Ta = 25°C) Parameter Gate-Source Leakage Symbol IGSS Min. − 30 − 1.0 − Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RDS(on)∗ l Yfs l∗ Ciss Coss Crss td(on)∗ tr∗ td(off)∗ tf∗ Q g∗ Qgs∗ Qgd∗ − − 5 − − − − − − − − − − Typ. − − − − 23 38 47 − 470 260 105 10 14 35 12 14 2 4 Max. ±10 − 10 2.5 − − − − − − − − − − − 28 − − S pF pF pF ns ns ns ns nC nC nC mΩ Unit µA V µA V Test Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7A, VGS=10V ID=7A, VGS=4.5V ID=7A, VGS=4.0V ID=7A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.3Ω RGS=10Ω VDD=15V VGS=10V ID=7A Drain-Source Breakdown Voltage V(BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage IDSS VGS(th) ∗Pulsed Body diode characteristics (Source-Drain characteristics) (Ta = 25°C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD∗ trr∗ Qrr∗ Min. − − − Typ. − 46 46 Max. 1.5 − − Unit V ns nC Test Conditions Is=6.4A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/µs ∗Pulsed RDS070N03 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 REVERSE DREIN CURRENT : IDR (A) 1 Ta=125°C 75°C 25°C −25°C 10 Ta=−25°C 25°C 75°C 125°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=0V Pulsed 100 VDS=10V Pulsed 1 0.1 1 0.1 0.01 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 100 0.001 0.1 1 10 VGS=4.5V Pulsed 100 SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) Fig.1 Reverse Drein Current vs. Source-Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (Ι) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=10V Pulsed 0.05 VGS=10V 0.045 Pulsed 0.04 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.08 Ta=25°C Pulsed 0.06 ID=7A 0.1 0.035 0.03 ID=7V 0.02 0.025 0.04 0.01 Ta=125°C 75°C 25°C −25°C 0.015 0.01 ID=3.5A 0.02 0.005 0 −50 −25 0 25 50 75 100 125 150 0.001 0.1 1 10 100 0 0 5 10 15 20 DRAIN CURRENT : I D (A) CHANNEL TEMPERATURE : Tch (°C) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS(th) (V) 4 DRAIN-SOURCE VOLTAGE : VDS (V) 3 CAPACITANCE : C (pF) Ciss 25 20 15 10 5 0 0 VDS=24V VDS=15V VDS=10V 10 8 6 4 Coss 100 Crss 2 1 0 −50 −25 0 25 50 75 100 125 150 Ta=25°C f=1MHz 10 VGS=0V 0.1 1 10 100 2 4 6 8 Ta=25°C 2 ID=7A Pulsed 0 14 10 12 CHANNEL TEMPERATURE : Tch (°C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 1000 30 VDS=10V VDS=15V VDS=24V 12 RDS070N03 Transistors 10000 Ta=25°C VDD 15V VGS=10V RG=10Ω Pulsed 10 10V 4.5V 4.0V 5.0V 6.0V Ta=25°C Pulsed 3.5V SWITCHING TIME : t (ns) 1000 100 tf td(off) DRAIN CURRENT : ID (A) 5 3.0V tr 10 td(on) VGS=2.5V 1 0.01 0.1 1 10 0 0 1 2 3 4 5 DRAIN CURRENT : I D (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25°C θth(ch-c) (t)=r(t) θth(ch-c) θth(ch-c)=6.25°C / W PW T D=PW T 0.01 0.001 10µ 100µ 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width