RF04UA2D_11

Data Sheet Super Fast Recovery Diode RF04UA2D  Series Standard Fast Recovery  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.9 0.95 0.95  Applications High frequency rectification 1.0 min.  Features 1)Surface mounting type (TSMD6) 2)High reliability 0.7 TSMD6 0.8  Structure (6) (5) (4)  Construction Silicon epitaxial planer (1) (2) (3)  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.75±0.1 2.4 0.3±0.1 3.2±0.08 0.45 0.35 0.35 0.45 3.5±0.05 3.2±0.08 3.2±0.08 4.0±0.1 φ1.1±0.1 0～0.5 5.5±0.2 8.0±0.2 1.1±0.08  Absolute maximum ratings (Ta=25 C) Parameter Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io/2 IFSM Tj Tstg Conditions Direct voltage Glass epoxy substrate mounted Ta=25 C 60Hz half sin wave,resistive load Tc=130 C Limits 200 200 0.4 1 Unit V V A A 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C 150 C -40 to +150 C (* Standard of per diode)  Electrical characteristics (Tj=25 C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Conditions IF=0.2A VR=200V IF=0.5A,IR=1A,Irr=0.25×IR Min. － － － Typ. 0.86 0.01 11 Max. 0.98 10 25 Unit V A ns www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A RF04UA2D Electrical characteristics curves 　 Data Sheet 10 10000 Tj=150 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 f=1MHz FORWARD CURRENT : I F(A) REVERSE CURRENT : IR(nA) Tj=150 C 1 Tj=125 C 1000 Tj=125 C 100 Tj=75 C 10 0.1 Tj=25 C Tj=75 C 10 Tj=25 C 1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0 50 100 150 200 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : V F(mV) 870 REVERSE CURRENT : IR(nA) Tj=25 C IF=0.2A n=30pcs 100 Tj=25 C VR=200V n=30pcs CAPACITANCE BETWEEN TERMINALS : Ct(pF) 880 1000 30 Tj=25°C f=1MHz VR=0V n=10pcs 20 AVE:10.9pF 860 10 AVE:1.3nA 850 10 1 840 AVE : 851.3mV 0.1 VF DISPERSION MAP IR DISPERSION MAP 830 0 Ct DISPERSION MAP 30 REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:10.2ns Tj=25°C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 20 8.3ms AVE:10.2A 10 1cyc Ifsm 100 8.3ms 8.3ms 1cyc 10 0 1 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 AVE : 21.9kV 25 20 15 10 5 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 AVE : 3.9kV Ifsm 10000 PEAK SURGE FORWARD CURRENT : I FSM(A) t 100 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) IM=10mA 1000 IF=1A 1ms time 300s 100 Rth(j-a) 10 Rth(j-c) 10 On glass-epoxy board 1 0.001 1 C=200pF R=0 C=100pF R=1.5k 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A RF04UA2D 　 Data Sheet 0A 0V 0.25 D.C. D=0.8 D=0.5 0.15 half sin wave D=0.2 0.1 D=0.1 D=0.05 Io t T VR D=t/T VR=200V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A 0V 0.35 D.C. 0.3 Io t T VR D=t/T VR=200V Tj=150 C 0.35 0.3 0.2 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) FORWARD POWER DISSIPATION : Pf(W) 0.25 0.2 0.15 0.1 0.05 0 D.C. D=0.8 0.25 0.2 0.15 0.1 0.05 0 D=0.8 half sin wave D=0.5 D=0.2 half sin wave D=0.2 D=0.5 0.05 D=0.05 D=0.1 D=0.05 0 30 D=0.1 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 30 60 90 120 150 60 90 120 150 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( C) Derating Curve(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A