RF2001NS3D_11

Data Sheet Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) Applications General rectification RF2001 NS3D ① Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type ROHM : LPDS JEITA : TO263S Structure Construction Silicon epitaxial planer ① Manufacture Year, Week and Day ①②③ Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load , Tc=90°C 1/2 Io per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 350 300 20 100 150 55 to 150 Unit V V A A C C Electrical characteristics (Tj=25C, per diode) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) Conditions IF=10A VR=300V Min. － － － － Typ. 1.2 0.03 17 － Max. 1.3 10 25 2 Unit V μA ns °C/W IF=0.5A,IR=1A,Irr=0.25×I R junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RF2001NS3D 　 Data Sheet 100 100000 Tj=150°C 10000 10 Tj=125°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 Tj=125°C Tj=150°C Tj=25°C 1 Tj=75°C 100 Tj=75°C Tj=25°C 10 per diode 0.1 0 500 1000 1500 2000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 50 100 150 200 per diode 250 300 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz per diode FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1300 IF=10A 1250 Tj=25°C per diode 1200 100 1150 AVE:1163mV 1100 1050 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 VF DISPERSION MAP 100 VR=300V Tj=25°C per diode AVE:46.7nA 240 f=1MHz VR=0V Tj=25°C per diode 220 REVERSE CURRENT:IR(nA) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 AVE:207.8pF 1 IR DISPERSION MAP 180 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RF2001NS3D 　 Data Sheet 300 1cyc REVERSE RECOVERY TIME:trr(ns) 30 IF=0.5A IR=1A Irr=0.25×IR Tj=25°C per diode 20 250 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 25 200 150 AVE:167.5A 100 15 AVE:16.9ns 10 50 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 100 10 IFSM 8.3ms 1cyc 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 AVE：29.8kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 10 Rth(j-c) 20 15 1 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RF2001NS3D 　 Data Sheet 45 D.C. 40 35 FORWARD POWER DISSIPATION:Pf(W) 30 25 20 D=0.05 15 10 5 0 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS D=0.8 D=0.5 half sin wave D=0.2 D=0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 0A 0V t 25 D=0.8 D=0.5 20 half sin wave D=0.2 T Io VR D=t/T VR=280V Tj=150°C 30 D.C. 15 10 5 D=0.1 D=0.05 0 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 35 D.C. 30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 0A 0V t T Io VR D=t/T VR=280V Tj=150°C 25 D=0.5 20 half sin wave 15 D=0.2 10 D=0.1 5 D=0.05 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A