RFUS20NS6S

Data Sheet Super Fast Recovery Diode RFUS20NS6S Series Ultra Fast Recovery Dimensions(Unit : mm) Land size figure(Unit : mm) Applications General rectification Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type Structure ② ① Construction Silicon epitaxial planer Taping dimensions(Unit : mm) ③ Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Electrical characteristics (Tj=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave resistive load , Limits 600 600 20 100 150 55 to 150 Unit V V A A C C Tc=36C 1/2 Io per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Symbol VF IR trr Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 2.4 0.05 23 - Max. 2.8 10 35 2 Unit V μA ns C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RFUS20NS6S Electrical characteristic curves 100 Tj=125 C Tj=150 C 　 Data Sheet 1000000 100000 Tj=150 C Tj=125 C 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(A) 10 REVERSE CURRENT : IR(nA) f=1MHz Tj=25 C Tj=25 C Tj=75 C 10000 Tj=75 C 1000 100 10 1 Tj=25 C 100 1 0.1 0 1000 2000 3000 4000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 0 50 100 150 200 250 300 350 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 2500 100 Tｊ=25 C IF=10A n=20pcs Tｊ=25 C VR=600V n=20pcs 600 2400 AVE : 71.5nA CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) 550 Ta=25 C f=1MHz VR=0V n=10pcs 2300 10 500 2200 AVE : 2264mV 2100 450 AVE : 492pF 2000 VF DISPERSION MAP 1 IR DISPERSION MAP 400 Ct DISPERSION MAP 300 250 200 150 100 50 0 IFSM DISRESION MAP IFSM 8.3ms 1cyc 30 1000 Tｊ=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs REVERSE RECOVERY TIME : trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) 20 15 10 5 0 AVE : 26.1ns PEAK SURGE FORWARD CURRENT : I FSM(A) 25 100 AVE : 144.5A 10 IFSM 8.3ms 8.3ms 1cyc. 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 5 4.5 10 ELECTROSTATIC DISCHARGE TEST ESD(KV) 4 3.5 3 2.5 2 1.5 1 0.5 0 AVE : 0.94kV AVE : 3.76kV TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) IFSM Rth(j-c) time 100 1 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RFUS20NS6S 　 Data Sheet 90 D.C. 80 70 D=0.8 D=0.5 half sin wave D=0.2 D=0.1 D=0.05 35 0A Io VR D=t/T T VR=480V Tj=150C 30 D.C. D=0.8 0V t AVERAGE RECTIFIED FORWARD CURRENT : Io(A) FORWARD POWER DISSIPATION : Pf(W) 60 50 40 30 20 10 0 0 5 25 20 15 D=0.5 half sin wave D=0.2 10 5 0 D=0.1 D=0.05 10 15 20 25 30 35 0 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A