RGT50NS65DGTL

RGT50NS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 25A VCE(sat) (Typ.) 1.65V PD 194W lFeatures LPDS / TO-262 (2) (1) (3) (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss *1 3) Short Circuit Withstand Time 5μs (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplications Packaging General Inverter Reel Size (mm) 330 / - Tape Width (mm) 24 / - UPS Taping / Tube Type Power Conditioner Basic Ordering Unit (pcs) 1,000 / 1,000 Welder Packing Code TL / C9 Marking RGT50NS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 48 A TC = 100°C IC 25 A ICP*1 75 A TC = 25°C IF 35 A TC = 100°C IF 20 A IFP*1 75 A TC = 25°C PD 194 W TC = 100°C PD 97 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.01 - Rev.A Data Sheet RGT50NS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.77 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.12 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 17.5mA 5.0 6.0 7.0 V Tj = 25°C - 1.65 2.1 V Tj = 175°C - 2.15 - Gate - Emitter Threshold Voltage IC = 25A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2016.01 - Rev.A Data Sheet RGT50NS65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1400 - Output Capacitance Coes VGE = 0V - 56 - Reverse Transfer Capacitance Cres f = 1MHz - 22 - Total Gate Charge Qg VCE = 300V - 49 - Gate - Emitter Charge Qge IC = 25A - 15 - Gate - Collector Charge Qgc VGE = 15V - 19 - Turn - on Delay Time td(on) IC = 25A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 32 - Tj = 25°C - 88 - Inductive Load - 65 - td(on) IC = 25A, VCC = 400V - 28 - tr VGE = 15V, RG = 10Ω - 37 - Tj = 175°C - 100 - Inductive Load - 110 - Rise Time pF nC ns Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time td(off) tf ns Turn - off Delay Time Fall Time td(off) tf IC = 75A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C VCC ≦ 360V Short Circuit Withstand Time tsc VGE = 15V 5 - - μs Tj = 25°C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/11 2016.01 - Rev.A Data Sheet RGT50NS65D lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.25 - - 58 - ns - 6.3 - A - 0.20 - μC - 256 - ns - 10.4 - A - 1.35 - μC IF = 20A Diode Forward Voltage Diode Reverse Recovery Time VF trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. V IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 20A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2016.01 - Rev.A Data Sheet RGT50NS65D lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 60 200 50 160 Collector Current : IC [A] Power Dissipation : PD [W] 180 140 120 100 80 60 40 40 30 20 　10 Tj≦175ºC VGE≧15V 20 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 Case Temperature : TC [ºC] Case Temperature : TC [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 100 1000 Collector Current : IC [A] Collector Current : IC [A] 10µs 100 10 100µs 1 0.1 TC= 25ºC Single Pulse 80 60 40 20 Tj≦175ºC VGE=15V 0.01 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2016.01 - Rev.A Data Sheet RGT50NS65D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 75 75 Tj= 25ºC Tj= 175ºC VGE= 15V Collector Current : IC [A] Collector Current : IC [A] VGE= 20V VGE= 20V 60 VGE= 12V 45 30 VGE= 10V VGE= 8V 15 0 60 VGE= 15V 45 VGE= 12V 30 VGE= 10V 15 VGE= 8V 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 50 Collector To Emitter Saturation Voltage : VCE(sat) [V] 4 VCE= 10V Collector Current : IC [A] 1 40 30 20 Tj= 175ºC 10 Tj= 25ºC 0 0 2 4 6 8 10 IC= 50A 3 IC= 25A 2 IC= 12A 1 0 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2016.01 - Rev.A Data Sheet RGT50NS65D lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 50A IC= 25A 10 IC= 12A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175ºC IC= 50A 15 IC= 25A 10 IC= 12A 5 0 20 5 Gate To Emitter Voltage : VGE [V] 10 15 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 VCC=400V, IC=25A VGE=15V, Tj=175ºC Inductive ｌoad Switching Time [ns] VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Switching Time [ns] 20 tf 100 td(off) tf 100 td(off) tr td(on) td(on) tr 10 10 0 10 20 30 40 50 0 Collector Current : IC [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2016.01 - Rev.A Data Sheet RGT50NS65D lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 1 Eoff 0.1 Eon VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Eoff 1 Eon 0.1 VCC=400V, IC=25A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0.01 0 10 20 30 40 0 50 Collector Current : IC [A] 20 30 40 50 Gate Resistance : RG [Ω] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 10 10 5 VCC=300V IC=25A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Charge : Qg [nC] 8/11 2016.01 - Rev.A Data Sheet RGT50NS65D lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 75 60 45 30 Tj= 175ºC 15 Tj= 25ºC VCC=400V diF/dt=200A/µs Inductive ｌoad 300 Tj= 175ºC 200 100 Tj= 25ºC 0 0 0 0.5 1 1.5 2 2.5 0 3 Forward Voltage : VF[V] 20 30 40 50 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 Reverse Recovery Charge : Qrr [µC] Reverse Recovery Current : Irr [A] 10 15 Tj= 175ºC 10 5 VCC=400V diF/dt=200A/µs Inductive ｌoad Tj= 25ºC 0 VCC=400V diF/dt=200A/µs Inductive ｌoad 2 1.5 Tj= 175ºC 1 0.5 Tj= 25ºC 0 0 10 20 30 40 50 0 Forward Current : IF [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Forward Current : IF [A] 9/11 2016.01 - Rev.A Data Sheet RGT50NS65D lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 1 0.1 0.2 D= 0.5 PDM 0.1 t1 0.01 0.01 0.0001 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC Single Pulse 0.02 0.05 0.001 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 0.1 0.2 D= 0.5 1 PDM 0.1 0.01 Single Pulse 0.02 t1 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.05 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width : t1[s] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10/11 2016.01 - Rev.A Data Sheet RGT50NS65D lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt 10% Eon Irr VCE(sat) Fig.24 Inductive Load Waveform Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Eoff 11/11 2016.01 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. R1102A Datasheet RGT50NS65D(LPDS) - Web Page Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS RGT50NS65D(LPDS) LPDS 1000 1000 Taping inquiry Yes