RK3055ETL

RK3055E Transistors 10V Drive Nch MOSFET RK3055E zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 10V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. 2.3 (2) (3) 2.3 0.5 1.0 Abbreviated symbol : 3055E (3)Source zApplications Switching zPackaging specifications Package Type zInner circuit Taping TL Code Basic ordering unit (pieces) 2500 RK3055E (1) Gate (2) Drain (3) Source (1) (2) (3) zAbsolute maximum ratings (Ta=25°C) Symbol Parameter Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Drain current Continuous Pulsed Reverse drain current ID 8 A IDP∗ 20 A Continuous IDR 8 A Pulsed IDRP∗ 20 A Total power dissipation (Tc=25°C) PD 20 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗ Pw≤10µs, Duty cycle≤1% Rev.B 1/4 RK3055E Transistors zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±20V, VDS=0V V(BR)DSS 60 − − V ID=1mA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Test Conditions IDSS − − 10 µA VDS=60V, VGS=0V Gate threshold voltage VGS(th) 1.0 − 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) Zero gate voltage drain current Yfs ∗ Forward transfer admittance − − 0.15 Ω ID=4A, VGS=10V 4.0 − − S ID=4A, VDS=15V Input capacitance Ciss − 520 − pF VDS=10V Output capacitance Coss − 240 − pF VG=0V Reverse transfer capacitance Crss − 100 − pF f=1MHz Turn-on delay time td(on) − 5.0 − ns ID=2.5A, VDD tr − 20 − ns VGS=10V td(off) − 50 − ns RL=12Ω tf − 20 − ns RG=10Ω Rise time Turn-off delay time Fall time ∗ 30V Pw ≤ 300µs, Duty cycle ≤ 1% zElectrical characteristics curve 10 100µs DC 2 1m s PW =1 0 m s Op er at 1 ion 0.5 0.2 Tc=25°C Single pulse 0.1 0.5 1 2 10V 8V 6V 5V 8 7 4V 6 5 4 3 2 5 10 20 50 0 0 100 2 3 4 1.0 0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.4 Gate Threshold Voltage Fig.9 vs. Channel Temperature 2 0.5 Ta=125°C 75°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 2 3 4 5 6 7 8 Fig.3 Typical Transfer Characteristics 10 VGS=10V 5 Pulsed 1 1 GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2.0 0.1 0.05 0.01 0 5 Fig.2 Typical Output Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 3.0 0.2 0.02 1 10 VDS=10V ID=1mA 0.5 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Maximum Safe Operating Area 4.0 VDS=10V 5 Pulsed Ta=125°C 75°C 2 25°C −25°C 1 VGS=3V 1 DRAIN-SOURCE VOLTAGE : VDS (V) GATE THRESHOLD VOLTAGE : VGS(th) (V) 10 Ta=25°C Pulsed 9 DRAIN CURRENT : ID (A) ea ar his (on) t S 20 in D on y R ati b 10 per ited O lim is 5 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 50 0.5 1 2 5 10 DRAIN CURRENT : I D (A) Fig.5 Static Drain-Source On-State Resistance Fig.9 vs. Drain Current ( Ι ) VGS=4V 5 Pulsed 2 1 0.5 Ta=125°C 75°C 25°C −25°C 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10.0 DRAIN CURRENT : I D (A) Fig.6 Static Drain-Source On-State Resistance Fig.9 vs. Drain Current ( ΙΙ ) Rev.B 2/4 RK3055E 0.6 0.2 ID=5A 2.5A 0.1 0 5 10 15 0.5 0.4 0.3 0.2 ID=5A 0 −50 −25 GATE-SOURCE VOLTAGE : VGS (V) VGS=0V Pulsed 5 Ta=125°C 75°C 25°C −25°C 2 1 0.5 0.2 0.1 0.05 0 0.5 1.0 1.5 tf tr 20 10 td(on) 5 2 0.05 0.1 0.2 0.5 1 2 5 DRAIN CURRENT : I D (A) Fig.13 Switching Characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) 20 10 Ta = −25°C 25°C 75°C 125°C 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 VGS=10V Ta=25°C f=1MHz VGS=0V Pulsed 5000 0V 0.5 0.1 0.05 5.0 10 Fig.9 Forward Transfer Admittance Fig.9 vs. Drain Current 10000 1 2.0 DRAIN CURRENT : I D (A) 2000 1000 500 Ciss Cos 200 s Crs 100 s 50 20 0.01 0 1.0 0.5 1.5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Reverse Drain Current Fig.14 vs. Source-Drain Voltage ( ΙΙ ) Fig.12 Typical Capacitance Fig.14 vs. Drain-Source Voltage 1000 td(off) 50 100 125 150 Ta=25°C Pulsed REVERSE RECOVERY TIME : trr (ns) SWITCHING TIME : t (ns) 100 75 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed 200 50 5 Fig.10 Reverse Drain Current Fig.14 vs. Source-Drain Voltage ( Ι ) 500 25 VDS=15V 50 Pulsed Fig.8 Static Drain-Source On-State Resistance Fig.9 vs. Channel Temperature SOURCE-DRAIN VOLTAGE : VSD (V) 1000 0 100 CHANNEL TEMPERATURE : Tch (°C) REVERSE DRAIN CURRENT : IDR (A) REVERSE DRAIN CURRENT : IDR (A) 10 2.5A 0.1 20 Fig.7 Static Drain-Source On-State Resistance Fig.9 vs. Gate-Source Voltage VGS=10V Pulsed CAPACITANCE : C (pF) Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.3 FORWARD TRANSFER ADMITTANCE : YfS (S) Transistors 10 di/dt=50A/µs VGS=0V 500 Ta=25°C Pulsed 100 50 10 0.1 0.2 0.5 1 2 5 10 REVERSE DRAIN CURRENT : IDR (A) Fig.14 Reverse Recovery Time Fig.14 vs. Reverse Drain Current Rev.B 3/4 RK3055E Transistors NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25°C θth (ch-c) (t)=r (t) θth (ch-c) θth (ch-c)=6.25°C/W 0.01 0.01 Single pulse 0.001 1µ PW T 100µ 1m 10m 100m D=PW T 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width zSwitching characteristics measurement circuit Pulse Width VGS RG ID D.U.T. VDS RL VGS 90% 50% 10% 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.16 Switching Time Test Circuit tr td (off) tf toff Fig.17 Switching Time Waveforms Rev.B 4/4 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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