RMW200N03

Data Sheet 4.5V Drive Nch MOSFET RMW200N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) PSOP8 0.5 5.0 6.0 (8) (7) (6) (5) Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). 0~0.1 0.5 1pin mark (1) (2) (3) (4) 0.4 0.22 0.9 1.27 5.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RMW200N03 Type Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD Symbol VDSS VGSS Limits 30 20 20 Unit V V A A A A W C C (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 80 2.5 80 3.0 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * MOUNTED ON 40mm×40mm Cu BOARD Symbol Rth (ch-a)* Limits 41.7 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A RMW200N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 1.0 20 Typ. 3.0 4.0 1780 580 210 18 50 60 20 29 5.7 5.5 Max. 10 1 2.5 4.2 5.6 Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=20A, VGS=10V ID=20A, VGS=4.5V ID=20A, VDS=10V VDS=15V VGS=0V f=1MHz ID=10A, VDD 15V VGS=10V RL=1.5 RG=10 ID=20A, VDD 15V VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A RMW200N03 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 20 18 16 DRAIN CURRENT : ID[A] 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.5V Ta=25°C Pulsed 　 Fig.2 Typical Output Characteristics(Ⅱ) 20 18 16 DRAIN CURRENT : ID[A] 14 12 10 8 6 4 2 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.5V VGS= 3.0V Ta=25°C Pulsed Data Sheet VGS= 3.0V Fig.3 Typical Transfer Characteristics 100 VDS= 10V Pulsed 10 DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed . 0.1 0.01 VGS= 4.5V VGS= 10V 0.001 0 1 2 3 1 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 VGS= 4.5V Pulsed DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A RMW200N03 　 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 Data Sheet 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= 10V Pulsed 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.1 1 10 100 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 ID= 10A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 8 SWITCHING TIME : t [ns] ID= 20A 1000 Ta=25°C Pulsed tf 10000 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Switching Characteristics Ta=25°C VDD= 15V VGS=10V RG=10Ω Pulsed td(off) 100 td(on) 10 6 4 2 tr 0 0 5 10 15 1 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Dynamic Input Characteristics 10 10000 Ciss GATE-SOURCE VOLTAGE : VGS [V] 8 CAPACITANCE : C [pF] Coss 1000 Crss DRAIN-CURRENT : ID[A] Fig.12 Typical Capacitance vs. Drain-Source Voltage 6 4 Ta=25°C VDD= 15V ID= 20A RG=10Ω Pulsed 0 5 10 15 20 25 30 100 Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 2 0 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A RMW200N03 　 Data Sheet Fig.13 Maximum Safe Operating Aera 1000 Operation in this area is limited by RDS(ON) (VGS=10V) 100 DRAIN CURRENT : ID (A) PW =100us 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width 10 1 0.1 1 PW =1ms PW = 10ms 0.01 0.1 Ta = 25°C Single Pulse Mounted on a COPPER BOARD 0.1 1 10 DC operation 0.001 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 41.7°C/W 0.001 0.01 0.1 1 10 100 1000 0.01 100 0.0001 0.0001 DRAIN-SOURCE VOLTAGE : VDS[V] PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A RMW200N03  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A