4V Drive Pch MOSFET
RP1E100RP
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
MPT6
(Single)
Features 1) Low On-resistance. 2) High power package. 3) 4V drive.
(6)
(5)
(4)
(1)
(2)
(3)
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E100RP Taping TR 1000
Inner circuit
(6) (5) (4)
∗2
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Limits 30 20 10
*1
Unit V V A A A A W C C
(1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain
∗1
(1)
(2)
(3)
VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
*1 *2
40 1.6 40 2.0 150 55 to +150
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 62.5
Unit C / W
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.B
RP1E100RP
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 13 Typ. 9.0 12.5 14.0 3600 450 450 25 60 150 100 39 8.5 13.5 Max. 10 1 2.5 12.6 17.5 19.6 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V m ID=5A, VGS=4.5V ID=5A, VGS=4.0V ID=10A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5A, VDD 15V VGS=10V RL=3.0 RG=10 ID=10A, VDD 15V VGS=5V RL=1.5 RG=10
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=10A, VGS=0V
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.07 - Rev.B
RP1E100RP
Electrical characteristic curves
20 DRAIN CURRENT : ID[A] 18 16 14 12 10 8 6 4 2 0
0.0 0.2 0.4 0.6 0.8 1.0
Data Sheet
DRAIN CURRENT : ID[A]
16 14 12 10 8 6 4 2 0 0 2 4
DRAIN CURRENT :ID[A]
VGS= -10V VGS= -4.5V VGS= -4.0V
20 18 VGS= -10V VGS= -4.5V VGS= -4.0V
100
VDS=-10V Pulsed Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃
10
VGS= -3.2V
VGS= -3.2V VGS= -2.8V Ta=25℃ Pulsed
1
VGS= -2.8V Ta=25℃ Pulsed
0.1
VGS=2.4V 6
0.01 8 10 1.0 1.5 2.0 2.5 3.0 DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical output characteristics(Ⅰ)
Fig.2 Typical output characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ]
100 Ta=25℃ Pulsed
100 VDS=-10V Pulsed
100
VGS= -4.5V Pulsed
10 VGS= -4.0V VGS= -4.5V VGS= -10V
10 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ)
10 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ)
1 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ)
REVERSE DRAIN CURRENT : Is [A]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ]
100 VGS= -4.0V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
100
100 VGS=0V Pulsed 10 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃
VDS=-10V Pulsed
10
10
Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃
1
Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃
1
0.1
1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain
0 0.1 1 10 100
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE :VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
DRAIN-CURRENT :ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.07 - Rev.B
RP1E100RP
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ]
GATE-SOURCE VOLTAGE : VGS [V]
100 Ta=25℃ Pulsed
10000 td(off) Switching Time : t [ns] 1000 tf
ID= -10.0A 50 ID= -5.0A
Ta=25℃ VDD= -15V VGS= -10V RG=10Ω Pulsed
10 8 6 4 2 0 Ta=25℃ VDD= -15V ID= -10A RG=10Ω Pulsed
100
10 tr 1 td(on)
0 0 5 10 15 GATE-SOURCE VOLTAGE :VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
0.01
0.1
1
10
100
0
10
20
30
40
50
60
70
DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
10000 CAPACITANCE : C [pF] Ciss 1000 Crss Coss 100 Ta=25℃ f=1MHz VGS=0V 0.01 0.1 1 10 100
1000
DRAIN CURRENT : ID [A]
100
Operation in this area is limited by RDS(ON)
PW=100 s
10
PW=1ms
PW = 10ms
1
Ta = 25℃ Single Pulse Mounted on a CERAMIC board
0.1
DC operation
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Maximum Safe Operating Aera
10
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
1
0.1
Ta = 25℃ Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 ℃/W
0.01
0.001 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.B
RP1E100RP
Measurement circuits
Pulse Width
Data Sheet
VGS
ID RL D.U.T.
VDS
VGS
10% 50% 10%
90%
50% 10% 90%
RG VDD
VDS td(on) ton 90% tr td(off) toff tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID RL IG(Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.07 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved.
R1010A
很抱歉,暂时无法提供与“RP1E100RP”相匹配的价格&库存,您可以联系我们找货
免费人工找货