RSJ10HN06

Data Sheet 4V Drive Nch MOSFET RSJ10HN06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) High power Package 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 (1) (2) 2.7  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ10HN06 Taping TL 1000   Inner circuit ∗1 ∗2 (1) (2) 1.2 2.54 0.4 (3) (1) Gate (2) Drain (3) Source 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 TC=25C *3 Limited only by maximum channel temperature allowed. Symbol VDSS VGSS ID *3 IDP IS ISP PD Tch Tstg *1 *3 *1 *2 Limits 60 20 100 200 100 200 100 150 55 to 150 Unit V V A A A A W C C Continuous Pulsed Continuous Pulsed  Thermal resistance Parameter Channel to Case * T C=25°C Symbol Rth (ch-c)* Limits 1.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A RSJ10HN06 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 60 1.0 60 Typ. 3.0 3.5 11000 2000 1050 50 470 420 710 202 35 42 Max. 10 1 2.5 4.2 4.9 Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=50A, VGS=10V ID=50A, VGS=4V VDS=10V, ID=50A VDS=10V VGS=0V f=1MHz VDD 30V, ID=50A VGS=10V RL=0.6 RG=10 VDD 30V, ID=50A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=100A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.09 - Rev.A RSJ10HN06 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 50 VGS=10.0V VGS=4.5V VGS=4.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 50 VGS=3.0V 40 VGS=10.0V Drain Current : ID [A] VGS=4.5V 30 VGS=4.0V VGS=3.5V Ta=25℃ pulsed 40 Drain Current : ID [A] 30 VGS=3.5V VGS=3.0V 20 20 VGS=2.5V 10 VGS=2.5V 10 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 VGS=4.0V VGS=10V 10 1 1 0.1 0.01 0.1 1 Drain Current : ID [A] 10 100 0.1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 1 1 0.1 0.01 0.1 1 Drain Current : ID [A] 10 100 0.1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.09 - Rev.A RSJ10HN06 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 1000 VDS=10V pulsed 100 Forward Transfer Admittance Yfs [S] Drain Currnt : ID [A] 10 100 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.01 0.001 0.1 1 Drain Current : ID [A] 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 20 Ta=25°C Pulsed 15 ID=50A ID=100A 10 Source Current : Is [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 10 0.1 5 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 100000 VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed tf 10 Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] Ta=25°C VDD=30V ID=50A Pulsed 10000 Switching Time : t [ns] 6 1000 td(off) 4 100 tr 2 td(on) 10 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 50 100 150 200 250 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.09 - Rev.A RSJ10HN06 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 100000 Normalized Transient Thermal Resistance : r（t） Ta=25°C f=1MHz VGS=0V Ciss Capacitance : C [pF] 10000 Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 1 0.1 Coss 1000 0.01 Crss 0.001 Mounted on epoxy board. (25mm × 28mm × 0.8mm) Rth(ch-a)=70.6°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 100 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.0001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.09 - Rev.A RSJ10HN06 Electrical characteristics (Ta = 25°C) 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A