RSX201L-30_11

Data Sheet Schottky barrier Diode RSX201L-30  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 3) High reliability. ① ② 0.1±0.02 　　　 0.1 5.0±0.3 5 4 4.5±0.2  Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 1.2±0.3 PMDS  Construction Silicon epitaxial planar 1.5±0.2 2.0±0.2  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Tj Storage temperature Tstg Limits 30 30 2 60 150 40 to 150 Unit V V A A °C °C (*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.44 150 Unit V μA IF=2.0A VR=30V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 2011.05 - Rev.C 12±0.2 4.2 RSX201L-30 Data Sheet 10 Ta=75℃ 100000 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ 1000 f=1MHｚ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=150℃ Ta=25℃ Ta=-25℃ 1000 100 10 1 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 0.1 100 0.01 Ta=-25℃ 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 10 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 200 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 0 AVE:30.41uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 380 370 360 AVE:376.0mV 350 VF DISPERSION MAP Ta=25℃ IF=2A n=30pcs 180 160 Ta=25℃ VR=30V n=30pcs 550 540 530 520 510 500 490 480 470 460 450 AVE:502.2pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 200 30 300 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 25 20 15 10 AVE:11.8ns 5 0 trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 200 150 100 50 0 1 Ifsm 8.3ms 8.3ms 1cyc 100 50 AVE:170.0A 0 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board 2 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1 Ifsm t 100 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 1.5 Sin(θ＝180) D=1/2 DC 10 IM=100mA Rth(j-c) IF=1A 1 1 1ms time 300us 0.5 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 0.1 TIME:t(s) 10 Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C RSX201L-30 Data Sheet 2 5 5 DC 0A 0V Io t T D=1/2 VR D=t/T VR=15V Tj=150℃ 4 3 2 Sin(θ＝180) 1 0 0 25 50 75 100 125 150 0 25 50 0A 0V DC Io t T VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 Sin(θ＝180) 1 DC 0.5 D=1/2 3 2 1 Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 D=1/2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 30 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 AVE:20.9kV 15 10 5 0 C=200pF R=0Ω No break at 30kV C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A