RTR025P02TL

RTR025P02 Transistors Switching (−20V, −2.5A) RTR025P02 TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 Each lead has 0.4 +0.1 −0.05 same dimensions 0.3~0.6 zExternal dimensions (Unit : mm) zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zApplication Power switching, DC / DC converter. 1.6 +0.2 −0.1 2.8±0.2 (3) 0~0.1 (2) (1) 0.95 0.95 0.16 +0.1 −0.06 1.9±0.2 Each lead has same dimensions zStructure Silicon P-channel MOS FET Abbreviated symbol : TY zPackaging specifications Package Type zEquivalent circuit Taping (3) TL Code Basic ordering unit (pieces) 3000 RTR025P02 ∗2 (1) ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±12 ±2.5 ±10 −0.8 −3.2 1.0 150 −55 to +150 Unit V V A A A A W °C °C Limits 125 °C / W (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-A) Unit 1/4 RTR025P02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − VGS (th) −0.7 Gate threshold voltage − Static drain-source on-state RDS (on) ∗ − resistance − Yfs ∗ 2.3 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge Qgd − Typ. − − − − 70 75 115 − 630 110 75 12 18 50 20 7 1.5 2.0 Max. ±10 − −1 −2.0 95 105 160 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −2.5A, VGS= −4.0V ID= −1.25A, VGS= −2.5V VDS= −10V, ID= −1.2A VDS= −10V VGS=0V f=1MHz ID= −1.25A VDD −15V VGS= −4.5V RL=12Ω RGS=10Ω VDD −15V VGS= −4.5V ID= −2.5A ∗Pulsed Body diode characteristics (source-drain characteristics) VSD Forward voltage − − −1.2 V IS= −0.8A, VGS=0V 2/4 RTR025P02 Transistors 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.001 0.5 1.0 1.5 2.0 Ta=25°C Pulsed VGS= −2.5V VGS= −4.0V VGS= −4.5V 100 1 0.01 2.5 0.1 GATE-SOURCE VOLTAGE : −VGS (V) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 1 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 0.1 1 Ciss Coss Crss 1 10 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0 100 Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed 1000 tf 100 td (off) td (on) 10 tr 1 0.01 0.1 1 0.5 1.0 1.5 2.0 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 0.1 10 10000 Ta=25°C f=1MHz VGS=0V 10 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current DRAIN CURRENT : −ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 10 0.01 1 DRAIN CURRENT : −ID (A) 100 10 100 10 0.1 10 1000 DRAIN CURRENT : −ID (A) 10000 100 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS= −4V Pulsed 10 0.1 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics 1000 1 1000 REVERSE DRAIN CURRENT : −IDR (A) 0.01 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS= −10V Pulsed 10 Fig.6 Reverse Drain Current vs.Source-Drain Voltage 8 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves Ta=25°C VDD= −15V ID= −2.5A RG=10Ω Pulsed 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 6 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RTR025P02 Transistors zMeasurement circuits VGS ID VDS VGS 10% 90% RL D.U.T. 90% 90% RG VDD VDS 10% td(on) 10% td(off) tr ton Fig.10 Switching Time Test Circuit tr toff Fig.11 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1