RZR020P01

1.5V Drive Pch MOSFET RZR020P01 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 0.85 0.7 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). (3) 1.6 2.8 0~0.1 (1) (2) 0.95 0.95 1.9 0.16 (1) Gate (2) Source (3) Drain Each lead has same dimensions Abbreviated symbol : ZE Applications Switching Inner circuit (3) Packaging specifications Package Type RZR020P01 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain Taping TL 3000 (1) ∗1 ∗2 Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±2 ±6 −0.8 −6 1.0 150 −55 to +150 Unit V V A A A A W °C °C Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board. Thermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.03 - Rev.A 0.3~0.6 RZR020P01 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − 2 Yfs ∗ Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Data Sheet Typ. − − − − 75 105 150 200 − 770 75 60 10 17 65 35 6.5 1.3 0.8 Max. ±10 − −1 −1.0 105 145 225 400 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −2A, VGS= −4.5V ID= −1A, VGS= −2.5V ID= −1A, VGS= −1.8V ID= −0.4A, VGS= −1.5V VDS= −6V, ID= −2A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −1A VGS= −4.5V RL 6Ω RG=10Ω VDD −6V, ID= −2A VGS= −4.5V RL 3Ω, RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −2A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.03 - Rev.A RZR020P01 Electrical characteristics curves 4 3.5 DRAIN CURRENT : -ID [A] 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 VGS= -1.5V -1.6V -2.5V -1.8V -10V -4.5V Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 VGS= -1.2V -4.5V -2.5V -1.5V -10V -1.8V Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 10 VDS= -6V Pulsed Data Sheet 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=25°C Pulsed 1000 VGS= -4.5V Pulsed 1000 VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 VGS= -1.8V Pulsed 1000 VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= -6V Pulsed 100 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 10 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.03 - Rev.A RZR020P01 10 REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed 500 Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 td(off) tf 100 Data Sheet Ta=25°C VDD = -6V VGS=-4.5V R G=10Ω Pulsed 400 ID = -1A ID = -2A 200 1 300 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 tr td(on) 100 0.01 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 GATE-SOURCE VOLTAGE : -VGS [V] 10000 CAPACITANCE : C [pF] 4 Ta=25°C f=1MHz VGS=0V Ciss 1000 3 2 Ta=25°C VDD = -6V ID = -2.0A RG= 10Ω Pulsed 0 1 2 3 4 5 6 7 8 Coss 100 Crss 1 0 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Measurement circuit ID VDS RL D.U.T. RG VDD Pulse width VGS 10% 50% 10% VDS 90% td(on) ton tr td(off) toff 50% 90% 10% 90% tf VGS Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID RL VG VDS Qg VGS IG (Const.) RG D.U.T. VDD Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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