SCT3080KLHRC11

SCT3080KLHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline VDSS RDS(on) (Typ.) ID*1 PD 1200V 80mΩ 31A 165W TO-247N (1) (2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Qualified to AEC-Q101 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications lApplication Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Type Tube Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3080KL lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 31 A Tc = 100°C ID *1 22 A ID,pulse *2 77 A -4 to +22 V -4 to +26 V VGS_op*4 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Drain - Source Voltage Continuous Drain current Pulsed Drain current VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge Recommended drive voltage Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 *3 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Drain - Source breakdown voltage Values Conditions Min. Typ. Max. V(BR)DSS Tj = 25°C 1200 - - Tj = -55°C 1200 - - Tj = 25°C - 1 10 Tj = 150°C - 2 - Unit VGS = 0V, ID = 1mA V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.7 - 5.6 V - 80 104 mΩ Tj = 150°C - 136 - f = 1MHz, open drain - 12 - , VDS = 0V VGS (th) VDS = 10V, ID = 5mA Gate threshold voltage μA VGS = 18V, ID = 10A Static Drain - Source on - state resistance RDS(on) *5 Tj = 25°C RG Gate input resistance Ω lThermal resistance Parameter Symbol RthJC Thermal resistance, junction - case Values Min. Typ. Max. - 0.70 0.91 Unit °C/W lTypical Transient Thermal Characteristics Symbol Value Rth1 9.00E-02 Rth2 5.96E-01 Rth3 1.47E-02 Unit K/W Tj PD Value Cth1 1.23E-03 Cth2 7.32E-03 Cth3 1.64E-01 Rth,n Rth1 Cth1 Symbol Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 10A - 4.4 - Input capacitance Ciss VGS = 0V - 785 - Output capacitance Coss VDS = 800V - 75 - Reverse transfer capacitance Crss f = 1MHz - 35 - Effective output capacitance, energy related Co(er) - 74 - Total Gate charge Qg *5 - 60 - - 11 - - 31 - - 15 - VGS = 0V/+18V - 22 - RG = 0Ω - 29 - - 24 - - 132 - *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 Rise time Turn - off delay time Fall time tr *5 td(off) *5 tf *5 VGS = 0V VDS = 0V to 600V VDS = 600V ID = 10A VGS = 18V See Fig. 1-1. VDS = 400V ID = 10A RL = 40Ω See Fig. 1-1, 1-2. Unit S pF pF nC ns VDS = 600V Turn - on switching loss Eon *5 VGS=0V/18V, ID = 10A RG = 0Ω, L = 750μH Turn - off switching loss www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff *5 Eon includes diode reverse recovery Lσ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. 3/12 μJ - 18 - TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous, forward current IS *1 Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 Conditions Values Unit Min. Typ. Max. - - 31 A - - 77 A - 3.2 - V - 17 - ns di/dt = 1100A/μs - 50 - nC Lσ = 50nH, Cσ = 200pF See Fig. 3-1, 3-2. - 6 - A Tc = 25°C VGS = 0V, ID = 10A IF = 10A VR = 600V *1 Limited by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve Operation in this area is limited by RDS(on) 100 180 140 Drain Current : ID [A] Power Dissipation : PD [W] 160 120 100 80 60 40 10 PW = 1μs* PW = 10μs* PW = 100μs 1 20 0 25 75 125 0.1 175 Case Temperature : TC [°C] PW = 1ms PW = 10ms Ta = 25ºC Single Pulse *Calculation(PW10μs) 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : RthJC [K/W] 1 0.1 0.01 0.001 Ta = 25ºC Single Pulse 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 15 30 20V 16V 18V Drain Current : ID [A] Drain Current : ID [A] 18V 20 20V Ta = 25ºC Pulsed 12V 14V 10 10V 14V Ta = 25ºC Pulsed 16V 10 12V 10V 5 VGS= 8V VGS= 8V 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 25ºC 3rd Quadrant Characteristics Drain Current : ID [A] 0 Ta = 25ºC Pulsed VGS = -4V VGS = -2V VGS = 0V VGS = 18V -10 -20 -30 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Fig.7 Tj = 150ºC Typical Output Characteristics(I) Fig.8 Tj = 150ºC Typical Output Characteristics(II) 15 30 20V 14V 18V 16V 20 10V 12V 10 0 VGS= 8V 2 4 6 8 VGS= 8V 5 0 10 0 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 3 4 5 Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage Body Diode Forward Voltage : VSD [V] Drain Current : ID [A] Ta = 150ºC Pulsed -20 -30 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150ºC 3rd Quadrant Characteristics -10 10V 10 Drain - Source Voltage : VDS [V] 0 12V 16V Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 14V 18V Drain Current : ID [A] Drain Current : ID [A] 20V 6 ID=10A 5 4 3 2 Ta= 150ºC 1 0 Ta= 25ºC -4 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 30 VDS = 10V Pulsed 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 0.01 0 2 4 6 20 10 0 8 10 12 14 16 18 20 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 5mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 2 -50 0 50 100 150 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 VDS = 10V Pulsed 0.1 1 10 Drain Current : ID [A] 8/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.18 Ta = 25ºC Pulsed 0.28 0.24 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.32 ID= 21A 0.20 ID= 10A 0.16 0.12 ID= -10A 0.08 0.04 0.00 10 12 14 16 18 20 ID= -10A 0.09 0.06 0.03 22 -50 Gate - Source Voltage : VGS [V] 1 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] 150 200 1.03 1.02 1.01 1.00 0.99 0.98 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 100 1.04 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 50 Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 0.1 0.01 0 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS = 18V Pulsed ID= 21A ID=10A 0.12 0.00 8 VGS = 18V Pulsed 0.15 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] 9/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 25 10000 Ciss 1000 Coss 100 10 1 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ta = 25ºC Crss Ta = 25ºC f = 1MHz VGS = 0V 0.1 1 10 100 20 15 10 5 0 1000 Drain - Source Voltage : VDS [V] 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Ta = 25ºC VDD = 600V ID = 10A Pulsed 15 10 5 0 0 10 20 30 40 50 60 70 Total Gate Charge : Qg [nC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lElectrical characteristic curves Switching Time : t [ns] 1000 Fig.20 Typical Switching Loss 　　　　　vs. Drain - Source Voltage Ta = VDD= VGS= RG = tf 300 25°C 400V +18V/0V 0Ω 100 td(off) tr 10 Ta = ID = VGS= RG = L= 270 Switching Energy : E [µJ] Fig.19 Typical Switching Time 　　　　　vs. Drain Current 10000 td(on) 240 210 25°C 10A +18V/0V 0Ω 750μH 180 Eon 150 120 90 60 Eoff 30 1 0.1 1 10 0 100 200 600 800 Fig.21 Typical Switching Loss 　　　　　vs. Drain Current Fig.22 Typical Switching Loss 　　　　　vs. External Gate Resistance 1200 1200 Ta = VDD= VGS= RG = L= 1000 800 25°C 600V +18V/0V 0Ω 750μH 600 400 Eon 200 0 Eoff 0 5 10 15 20 25 Ta = ID = VDD= VGS= L= 1000 800 25°C 10A 600V +18V/0V 750μH 600 400 Eon 200 Eoff 0 30 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1000 Drain - Source Voltage : VDS [V] Switching Energy : E [µJ] Switching Energy : E [µJ] Drain Current : ID [A] 400 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] 11/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 SCT3080KLHR Datasheet lMeasurement circuits and waveforms Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss Eon = ID ∙ VDS dt VDS Eoff = ID ∙ VDS dt Vsurge Irr ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Fig.3-2 Reverse Recovery Waveform 12/12 TSQ50211-SCT3080KLHR 16.Nov.2018 - Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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