SST2222AT116

UMT2222A / SST2222A / MMST2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A zDimensions (Unit : mm) zFeatures 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A. UMT2222A (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 SOT-323 zPackage, marking, and packaging specifications Part No. UMT2222A Packaging type UMT3 R1P T106 SST3 R1P T116 SMT3 R1P T146 3000 3000 3000 Marking Code Basic ordering unit (pieces) SST2222A SST2222A MMST2222A (1) Emitter (2) Base (3) Collector ROHM : SST3 MMST2222A zAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO 75 40 6 0.6 V V V A 0.2 W 0.35 150 −55 to +150 W °C °C VEBO IC UMT2222A,SST2222A, MMST2222A Collector power SST2222A dissipation Junction temperature Storage temperature PC Tj Tstg (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 ∗ ∗ When mounted on a 7 x 5 x 0.6 mm ceramic board zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min. Typ. Max. Unit BVCBO BVCEO 75 40 6 − − − − − − − − − − 100 100 V V V nA nA − − 0.3 BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time V Conditions IC =10µA IC =10mA IE =10µA VCB = 60V VEB = 3V IC/IB =150mA/15mA IC/IB =500mA/50mA − − 1 0.6 − − − 1.2 2 35 50 75 − − − − − − 50 100 − − − 300 Cob 40 300 − − − − − − 8 MHz pF Cib − − 25 pF td − − 10 ns tr tstg − − − − 25 225 ns ns VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA tf − − 60 ns VCC =30V , IC =150mA , IB1 =−IB2 =15mA hFE fT V − IC/IB =150mA/15mA IC/IB =500mA/50mA VCE =10V , IC =0.1mA VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA VCE =10V , IC =150mA VCE =10V , IC =500mA VCE =20V , IC =−20mA, f =100MHz VCB =10V , f =100kHz VEB =0.5V , f =100kHz Rev.A 1/3 UMT2222A / SST2222A / MMST2222A Transistors zElectrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 1000 600 400 50 Ta=25°C DC CURRENT GAIN : hFE 500 VCE=10V 100 300 200 1V 100 IB=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Fig.1 Grounded emitter output characteristics Ta=25°C IC / IB=10 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current(Ι) 1000 VCE=10V DC CURRENT GAIN : hFE 0.3 25°C 100 0.1 0 1.0 −55°C 10 0.1 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.2 Collector-emitter saturation voltage vs. collector current 1.0 AC CURRENT GAIN : hFE Ta=25°C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current(ΙΙ) 1000 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0.2 Ta=125°C Ta=25°C IC / IB=10 1.8 1.6 1.2 0.8 0.4 0 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.6 Base-emitter saturation voltage vs. collector current Rev.A 2/3 UMT2222A / SST2222A / MMST2222A 1.6 1000 Ta=25°C IC / IB=10 1.2 0.4 VCC=30V 10V 10 1 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics 1000 Fig.8 Turn-on time vs. collector current 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 FALL TIME : tf(ns) STORAGE TIME : Ts(ns) Ta=25°C VCC=30V IC=10IB1=10IB2 100 100 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 100MHz 250MHz 300MHz 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 5 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.9 Rise time vs. collector current 100 CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25°C VCC=30V IC / IB=10 100 100 0.8 500 RISE TIME : tr(ns) Ta=25°C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25°C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage Ta=25°C VCE=10V 100 1 250MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.13 Gain bandwidth product 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.14 Gain bandwidth product vs. collector current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0