TT8M3

1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package. Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03 Application Switching Packaging specifications Type TT8M3 Package Code Basic ordering unit (pieces) Taping TR 3000  Inner circuit (8) (7) (6) (5) Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits Tr1 : N-ch Tr2 : P-ch 20 10 2.5 10 0.8 10 1.25 1.0 150 55 to +150 20 10 2.4 9.6 0.8 9.6 Unit V V A A A A W / TOTAL W / ELEMENT C C (1) Tr1 Source (2) Tr1 Gate ∗2 ∗2 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain ∗1 (6) Tr2 Drain (7) Tr1 Drain (2) (3) (4) (1) (8) Tr1 Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 *1 *2 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.07 - Rev.A TT8M3 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) Min. 20 0.3 2.7 - Typ. 52 65 85 100 260 65 35 9 17 28 17 3.6 0.7 0.6 Max. 10 1 1.0 72 90 120 140 - Unit A V A V Conditions VGS=±10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=4.5V ID=2.5A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz ID=1.2A, VDD 10V VGS=4.5V RL=8.3 RG=10 ID=2.5A, VDD 10V VGS=4.5V,RL=4 RG=10 Drain-source breakdown voltage V (BR)DSS * RDS (on) m l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * S pF pF pF ns ns ns ns nC nC nC Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.5A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/8 2010.07 - Rev.A TT8M3  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) Min. 20 0.3 2.4 - Typ. 80 105 150 180 850 60 50 9 25 55 45 6.7 1.7 0.6 Max. 100 1 1.0 105 140 225 360 - Unit A V A V Conditions VGS=±10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=2.4A, VGS=4.5V ID=1.2A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V ID=2.4A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.2A, VDD 10V VGS=4.5V RL=8.3 RG=10 ID=2.4A VDD 10V VGS=4.5V Drain-source breakdown voltage V (BR)DSS m l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * S pF pF pF ns ns ns ns nC nC nC Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.4A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/8 2010.07 - Rev.A TT8M3 Electrical characteristic curves 5 DRAIN CURRENT : ID[A] 4 3 2 1 VGS= 1.0V 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 VGS= 1.5V VGS= 4.5V Ta=25°C Pulsed 5 DRAIN CURRENT : ID[A] 4 3 2 1 Ta=25°C Pulsed 10 VDS= 10V Pulsed Data Sheet DRAIN CURRENT : ID[A] VGS= 2.5V VGS= 2.0V VGS= 1.8V VGS= 1.2V VGS= 4.5V VGS= 2.5V VGS= 1.8V 1 VGS= 1.5V VGS= 1.2V VGS= 1.0V 0.1 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1000 1000 VGS= 2.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.8V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1000 VGS= 1.5V Pulsed 10 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 100 1 Ta=25°C Ta=25°C Ta=75°C Ta=125°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/8 2010.07 - Rev.A TT8M3 10 SOURCE CURRENT : Is [A] 200 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed Ta=25°C Pulsed ID= 2.5A ID= 1.25A 100 1000 SWITCHING TIME : t [ns] tf 100 td(off) td(on) 10 tr 0 0 5 10 1 0.01 0.1 1 Data Sheet Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed 150 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 50 0.01 0 0.5 1 1.5 10 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics GATE-SOURCE VOLTAGE : VGS [V] 5 4 3 2 1 0 0 1 2 3 CAPACITANCE : C [pF] 1000 Ta=25°C f=1MHz VGS=0V Ciss 100 Crss Ta=25°C VDD=10V ID=2.5A RG=10Ω Pulsed 4 5 Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/8 2010.07 - Rev.A TT8M3 Electrical characteristic curves 5 4 DRAIN CURRENT : -ID[A] 3 2 VGS= 1.5V 1 0 0 0.2 0.4 0.6 0.8 1 VGS= 1.2V Ta=25°C Pulsed VGS= 4.5V VGS= 2.5V 5 DRAIN CURRENT : -ID[A] 4 3 2 1 0 0 2 4 6 8 10 VGS= 4.5V VGS= 2.5V DRAIN CURRENT : -ID[A] VGS= 1.8V 10 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta=  25°C Data Sheet 1 VGS=1.8V VGS= 1.5V Ta=25°C Pulsed VGS= 1.2V 0.1 0.01 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed VGS= 1.5V VGS=1.8V VGS=2.5V VGS= 4.5V 1000 VGS= -4.5V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 100 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.8V Pulsed 1000 VGS= -1.5V Pulsed 10 VDS= -10V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta= 25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 10 0.1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 6/8 2010.07 - Rev.A TT8M3 200 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed 10000 SWITCHING TIME : t [ns] Ta=25°C Pulsed ID= -1.2A 100 ID= -2.4A Data Sheet REVERSE DRAIN CURRENT : -Is [A] 10 1 150 1000 tf td(off) Ta=25°C VDD= 10V VGS= 4.5V RG=10Ω Pulsed 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=25°C 100 50 10 tr td(on) 0.1 1 10 0.001 0 0.5 1 1.5 0 0 2 4 6 8 10 1 0.01 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] CAPACITANCE : C [pF] 4 3 2 1 0 0 2 4 Ta=25°C VDD= 10V ID= 2.4A RG=10Ω Pulsed 6 8 10000 Ciss 1000 Coss 100 Crss 10 0.01 0.1 1 10 100 Ta=25°C f=1MHz VGS=0V TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 7/8 2010.07 - Rev.A TT8M3 Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL VDS VGS Qgs Qg IG(Const.) D.U.T. VDD Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig 3-1 Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig 3-2 VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig 4-1 Fig.2-2 Gate Charge Waveform Fig 4-2 Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2010 ROHM Co., Ltd. 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