Data Sheet
Switching Diode
UMN20N
lApplications General switching lDimensions (Unit : mm) lLand size figure (Unit : mm)
0.65
2 .0±0.2 各リードとも 0.25± 0.1 Each lead has same dimension 0.05 同寸法 0.15±0.05
0.65
1.25±0.1
2.1±0.1
lFeatures 1)Small mold type. (UMD6) 2)Low leakage
(6)
(5)
(4)
0.9
0.35
0~0.1
0.1Min
(1)
(2) 0.65
(3)
UMD6
lConstruction Silicon epitaxial planer
0.65
1.3±0.1
0.7 0.9±0.1
lStructure
ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (repetitive peak) Average rectified forward current Io Isurge Surge current (t=1sec) Junction temperature Tj Storage temperature Tstg
Limits 40 35 225 100 400 150 -55 to +150
Unit V V mA mA mA C C
lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals IR Ct
Min. -
Typ. -
Max. 1.2 0.01 5.0
Unit V μA pF IF=100mA
Conditions VR=20V VR=0.5V , f=1.0MHz
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1/4
2011.10 - Rev.A
1.6
UMN20N
Data Sheet
1
100 Tj=150°C REVERSE CURRENT:IR(nA) Tj=150°C 10 Tj=125°C 1 Tj=75°C 0.1
FORWARD CURRENT:IF(A)
0.1
0.01
Tj=125°C Tj=75°C
0.001 Tj=25°C 0.0001 0 0.5 1 1.5 FORWARD VOLTAGE:VF(V) VF-IF CHARACTERISTICS
0.01
Tj=25°C
0.001 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
4 f=1MHz
980 975 FORWARD VOLTAGE:VF(mV) Tj=25°C IF=100mA n=50pcs
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
970 965 960 955 950 945 940 935 AVE.:950mV
3
2
1
0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
930 VF DISPERSION MAP
50 Tj=25°C VR=20V n=30pcs
5 Ta=25°C f=1MHz VR=0.5V n=30pcs
REVERSE CURRENT:IR(pA)
30
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
40
4
3
20
2
AVE.:4.3pA 10
AVE.:2.16pF 1
0 IR DISPERSION MAP
0 Ct DISPERSION MAP
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2/4
2011.10 - Rev.A
UMN20N
Data Sheet
10 9 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8 7 6 5 4 3 2 1 0 IFSM DISPERSION MAP AVE.:4.0A 8.3ms 1cyc REVERSE RECOVERY TIME:trr(us)
0.45 Tj=25°C IF=0.1A IR=0.1A Irr=0.1×IR n=10pcs
0.4
AVE:0.391us 0.35
0.3 trr DISPERSION MAP
5 4.5 PEAK SURGE FORWARD CURRENT:IFSM(A) 4 3.5 3 2.5 2 1.5 1 0.5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM
6
5 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc.
IFSM time
4
3
2
1
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
7
1000 Rth(j-a) AVE:5.83kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
6 ELECTROSTATIC DISCHARGE TEST ESD(KV)
5 4 AVE:2.30kV
100 Rth(j-c)
3 2
10
1 0 C=200pF R=0Ω C=150pF R=330Ω
1 0.001
0.01
0.1
1
10
100
1000
ESD DISPERSION MAP
TIME:t(s) Rth-t CHARACTERISTICS
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3/4
2011.10 - Rev.A
UMN20N
Data Sheet
0.16 0.14 0.12 FORWARD POWER DISSIPATION:Pf(W) 0.1 0.08 0.06 0.04 D.C.
1.0E-06
8.0E-07 D=1/2 Sin(θ=180) REVERSE POWER DISSIPATION:PR (W) 6.0E-07 D=1/2 4.0E-07 Sin(θ=180) 2.0E-07 0.02 0 0 0.05 0.1 0.15 0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0A 0.2 0V t D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) T Io VR D=t/T VR=20V Tj=150°C 0.0E+00 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D.C.
D=1/2 0.1 Sin(θ=180)
0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc)
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4/4
2011.10 - Rev.A
Notice
Notes
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R1120A
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