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UMN20N

UMN20N

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    UMN20N - Switching Diode - Rohm

  • 数据手册
  • 价格&库存
UMN20N 数据手册
Data Sheet Switching Diode UMN20N lApplications General switching lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.65 2 .0±0.2 各リードとも 0.25± 0.1 Each lead has same dimension 0.05 同寸法 0.15±0.05 0.65 1.25±0.1 2.1±0.1 lFeatures 1)Small mold type. (UMD6) 2)Low leakage (6) (5) (4) 0.9 0.35 0~0.1 0.1Min (1) (2) 0.65 (3) UMD6 lConstruction Silicon epitaxial planer 0.65 1.3±0.1 0.7 0.9±0.1 lStructure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (repetitive peak) Average rectified forward current Io Isurge Surge current (t=1sec) Junction temperature Tj Storage temperature Tstg Limits 40 35 225 100 400 150 -55 to +150 Unit V V mA mA mA C C lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals IR Ct Min. - Typ. - Max. 1.2 0.01 5.0 Unit V μA pF IF=100mA Conditions VR=20V VR=0.5V , f=1.0MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.6 UMN20N   Data Sheet 1 100 Tj=150°C REVERSE CURRENT:IR(nA) Tj=150°C 10 Tj=125°C 1 Tj=75°C 0.1 FORWARD CURRENT:IF(A) 0.1 0.01 Tj=125°C Tj=75°C 0.001 Tj=25°C 0.0001 0 0.5 1 1.5 FORWARD VOLTAGE:VF(V) VF-IF CHARACTERISTICS 0.01 Tj=25°C 0.001 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 4 f=1MHz 980 975 FORWARD VOLTAGE:VF(mV) Tj=25°C IF=100mA n=50pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 970 965 960 955 950 945 940 935 AVE.:950mV 3 2 1 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 930 VF DISPERSION MAP 50 Tj=25°C VR=20V n=30pcs 5 Ta=25°C f=1MHz VR=0.5V n=30pcs REVERSE CURRENT:IR(pA) 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 40 4 3 20 2 AVE.:4.3pA 10 AVE.:2.16pF 1 0 IR DISPERSION MAP 0 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A UMN20N   Data Sheet 10 9 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8 7 6 5 4 3 2 1 0 IFSM DISPERSION MAP AVE.:4.0A 8.3ms 1cyc REVERSE RECOVERY TIME:trr(us) 0.45 Tj=25°C IF=0.1A IR=0.1A Irr=0.1×IR n=10pcs 0.4 AVE:0.391us 0.35 0.3 trr DISPERSION MAP 5 4.5 PEAK SURGE FORWARD CURRENT:IFSM(A) 4 3.5 3 2.5 2 1.5 1 0.5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM 6 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc. IFSM time 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 7 1000 Rth(j-a) AVE:5.83kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 6 ELECTROSTATIC DISCHARGE TEST ESD(KV) 5 4 AVE:2.30kV 100 Rth(j-c) 3 2 10 1 0 C=200pF R=0Ω C=150pF R=330Ω 1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A UMN20N   Data Sheet 0.16 0.14 0.12 FORWARD POWER DISSIPATION:Pf(W) 0.1 0.08 0.06 0.04 D.C. 1.0E-06 8.0E-07 D=1/2 Sin(θ=180) REVERSE POWER DISSIPATION:PR (W) 6.0E-07 D=1/2 4.0E-07 Sin(θ=180) 2.0E-07 0.02 0 0 0.05 0.1 0.15 0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0A 0.2 0V t D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) T Io VR D=t/T VR=20V Tj=150°C 0.0E+00 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D.C. D=1/2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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