US6K4TR

US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 zApplications Switching zPackaging specifications zInner circuit Package Type (6) Taping (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗1 US6K4 ∗2 ∗2 ∗1 (1) zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±1.5 ±3.0 0.6 2.4 1.0 0.7 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ ∗ Mounted on a ceramic board Rev.A 1/3 US6K4 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − 1.6 − − − − − − − − − − Typ. Max. − − − − 130 170 220 − 110 18 15 5 5 20 3 1.8 0.3 0.3 ±10 − 1 1.0 180 240 310 − − − − − − − − 2.5 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC ID= 1.0A VDD 10V VGS= 4.5V RL= 10Ω RGS=10Ω VDD 10V VGS= 4.5V ID= 1.5A Unit V Conditions IS= 0.6A, VGS=0V VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Rev.A 2/3 US6K4 Transistors zElectrical characteristics curves 1000 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed SWITCHING TIME : t (ns) Ciss 100 100 tf td(off) 10 td(on) tr Coss Crss 0.1 1 10 1 0.01 100 0.1 1 VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) DRAIN CURRENT : ID (A) 10 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 0.0 0.5 1.0 1.5 2.0 100 1 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 0 0.0 0.2 Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 10 VGS=0V Pulsed Ta=25°C Pulsed 400 350 300 ID=1.5A 250 200 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TOTAL GATE CHARGE : Qg (nC) ID=0.8A 100 Ta=125°C 75°C 1 25°C −25°C 0.1 50 0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 1000 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 0.1 1 0.5 1.5 Fig.6 Source Current vs. Source-Drain Voltage 10 1000 VGS=4.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 0.1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=1.8V Pulsed 0.1 1 GATE-SOURCE VOLTAGE : VGS (V) 25°C −25°C 10 0.01 2 10 450 Fig.4 Typical Transfer Characteristics Ta=125°C 75°C 3 500 GATE-SOURCE VOLTAGE : VGS (V) 1000 Ta=25°C VDD=10V ID=1.5A 4 RG=10Ω Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 SOURCE CURRENT : IS (A) 10 0.01 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) 1000 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 Datasheet US6K4 - Web Page Buy Distribution Inventory Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS US6K4 TUMT6 3000 3000 Taping inquiry Yes