ERYF_STAR

UV-index sensor based on SiC EryF* Features • • • • • • • • Special UV-index sensor, precision up to +/- 0.5 UVI Optimally suited for accurate sun-UV dosimetry Also suited for sun tanning bank dosimetry Silicon Carbide based chip for radiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with integrated filter glass 0,054 mm2 active chip area The chip is manufactured by Cree Research Inc., U.S.A. Eigenschaften • • • • • • • • Spezieller UV-Index Sensor mit einer Genauigkeit bis zu +/- 0.5 UVI Optimale Eignung für präzise Messung des Sonnen-UV Auch geeignet zur Überwachung von Solarien Siliziumkarbid-Chip garantiert hohe Strahlungsfestigkeit Inhärente Unempfindlichkeit gegenüber dem sichtbaren Licht durch das Halbleitermaterial mit hoher Bandlücke TO-18 Metallgehäuse mit integriertem Filterglas 0,054 mm2 aktive Chipfläche Chiphersteller: Cree Research Inc., U.S.A. Rev. 1.4 Page 1 [4] UV-index sensor based on SiC EryF* Maximum Ratings Parameter Symbol Value Unit Operating temperature range Reverse voltage Topt VRmax -25 ... +70 20 °C V General Characteristics (Ta = 25 °C) Parameter Symbol Value Unit Active area Dark current at 1 V reverse bias Capacitance Short circuit current at bright sun A Id C 0.054 1 21 mm fA pF 2 I0 ca. 7 nA Spectral Characteristics (Ta = 25 °C) Parameter Symbol Value Unit Max. spectral sensitivity Wavelength of max. spectral sensitivity Range of spectral sensitivity (S=0.1*Smax) Smax λSmax - 0.11 295 235 - 325 AW -1 nm nm Rev. 1.4 Page 2 [4] UV-index sensor based on SiC EryF* Linear Spectral Response Logarithmic Spectral Response Rev. 1.4 Page 3 [4] UV-index sensor based on SiC EryF* Application Example Pin Layout Grounded pin: Isolated pin: Anode Cathode Rev. 1.4 Page 4 [4]