2SA1015-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1015 TO-92 TRANSISTOR (PNP) 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3.BASE Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW RθJA Thermal Resistance from Junction to Ambient 312 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -50V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE= -6V, IC= -2mA 70 400 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -10mA -1.1 V Transition frequency fT VCE= -10 V, IC= -1mA f =30MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF Noise figure NF VCE= -6 V, IC= -0.1mA, f =1kHz,RG=10kΩ 6 dB 80 MHz CLASSIFICATION OF hFE Rank Range O Y GR 70-140 120-240 200-400 B,Oct,2013