2SA1797

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristics z Complements to 2SC4672 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Continuous Collector Current -2 A ICM PC Peak Pluse Current Collector Power dissipation -3 500 A mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -6 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-500mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 82 270 IC=-1A, IB=-50mA -0.35 V VCE=-2V, IC=-0.5A, f=100MHz 200 MHz VCB=-10V, IE=0, f=1MHz 36 pF CLASSIFICATION OF hFE Rank Range Marking P Q 82-180 120-270 AGP AGQ C,Mar,2012 2SA1797 Typical Characteristics Static Characteristic -2.0 COMMON EMITTER Ta=25℃ (A) -10mA o Ta=100 C -9mA -8mA hFE COLLECTOR CURRENT IC -1.5 hFE —— IC 1000 -7mA o -1.0 -5mA -4mA -3mA -0.5 Ta=25 C DC CURRENT GAIN -6mA 100 -2mA COMMON EMITTER VCE= -2V IB=-1mA -0.0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCE 10 -10 -1 -10 (V) -1000 -2000 -100 COLLECTOR CURRENT VCEsat —— VBEsat —— IC IC (mA) IC -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -2 -1 o BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25 C o Ta=100 C -0.1 o Ta=100 C o Ta=25 C β=20 β=20 -0.1 -1 -10 -100 COLLECTOR CURRENT VBE —— -1000 IC -2000 -0.01 -1 -10 (mA) COLLECTOR CURRENT IC Cob / Cib 1000 -2000 -1000 -2000 -100 IC (mA) VCB / VEB —— f=1MHz IE=0 / IC=0 o Ta=25 C C (pF) Cib -100 100 CAPACITANCE COLLECTOR CURRENT IC (mA) -1000 o Ta=100 C o Ta=25 C -10 Cob 10 COMMON EMITTER VCE=-2V -1 -0.0 1 -0.3 -0.6 -0.9 BASE-EMITTER VOLTAGE fT —— -1 REVERSE VOLTAGE IC -20 -10 VBE(V) Pc 0.6 —— V (V) Ta COLLECTOR POWER DISSIPATION Pc (W) 0.5 100 0.4 TRANSITION FREQUENCY fT (MHz) 200 -1.2 0.3 0.2 COMMON EMITTER VCE=-2V 0.1 Ta=25℃ 10 0.0 -1 -10 COLLECTOR CURRENT -70 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Mar,2012