JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
2SA562
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Excellent hFE inearlity
2. COLLECTOR
3. BASE
Z z
Equivalent Circuit
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Z=Rank of h FE
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1
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6$
72
%XON
1000pcs/Bag
6$7$
72
7DSH
2000pcs/Box
Я unless otherwise noted)
MAXIMUM RATINGS (T=25Я
Symbol
Parameter
Value
Unit
6
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
6
VEBO
Emitter-Base Voltage
6
IC
Collector Current -Continuous
M!
PC
Collector Power Dissipation
M7
TJ,Tstg
Operation Junction and Storage Temperature Range
-55~+150
Я
VCBO
www.jscj-elec.com
1
Rev. - 2.0
' ''(' ) ')
Ta =25 Я unless otherwise specified
Parameter
Symbol
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
Ic=-100μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA, IB=0~30
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
M!
T&*
+
,!
6
6
6
Collector cut-off current
ICBO
VCB=35V, IE=0
-0.1
P!
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
P!
DC current gain
hFE
VCE=-1V, IC=-100mA
Collector-emitter saturation voltage
VCE(SAT)
Ic=-100mA, IB=-10mA
Base-emitter voltage
VBE
VCE=-1V, IC=-100mA
Transition frequency
fT
VCE=-6V, IC=-20mA
Collector output capacitance
Cob
VCE=-6V, IE=0,f=1MHz
70
6
6
-(Z
pF
CLASSIFICATION OF hFE
R
O
Y
R
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2
120-
Rev. - 2.0
Typical Characteristics
1000
COMMON EMITTER
Ta=25ć
-0.40mA
-0.32mA
-40
-0.24mA
Ta=25ć
100
-0.16mA
COMMON EMITTER
VCE=-1V
IB=-0.08mA
-0.5
-1.0
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Ta=100ć
hFE
-0.48mA
-300
10
-1.5
VCE
-10
-100
COLLECTOR CURRENT
VBEsat
—— IC
-500
(mA)
=10
Ta=100ć
Ta=25ć
-1
-10
-100
COLLECTOR CURRENT
IC
IC
-1000
Ta=25ć
-800
Ta=100ć
-600
-400
-200
-500
-1
-10
-100
COLLECTOR CURRENT
(mA)
—— VBE
Cob/ Cib
100
COMMON EMITTER
VCE=-1V
(pF)
CAPACITANCE
Ta=25ć
-10
-600
-800
BASE-EMMITER VOLTAGE
fT
-1000
VCB/ VEB
VBE
Ta=25ć
Cob
10
1
-0.1
-1200
-1
-10
REVERSE VOLTAGE
(mV)
—— IC
PC
625
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
1000
-500
(mA)
Cib
C
IC
Ta=100ć
-400
——
IC
f=1MHz
IE=0 / IC=0
-100
-1
-200
IC
—— IC
-1200
=10
-500
-1
(V)
-100
-10
(mA)
DC CURRENT GAIN
-0.56mA
-80
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR CURRENT
IC
(mA)
-0.72mA
COLLECTOR-EMITTER VOLTAGE
COLLCETOR CURRENT
IC
-0.80mA
-0.64mA
-0
-0.0
TRANSITION FREQUENCY
——
hFE
Static Characteristic
-120
100
COMMON EMITTER
VCE= -6V
——
V
-20
(V)
Ta
500
375
250
125
Ta=25ć
10
-10
COLLECTOR CURRENT
www.jscj-elec.com
0
-100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
3
100
Ta
125
150
(ć )
Rev. - 2.0
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A1
b
c
D
D1
E
e
e1
L
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h
!.#!. !--.
!.#!. ! !".
!
+
!
+
3.300
3.700
0.130
0.146
1.100
1.400
0.043
0.055
0.380
0.550
0.015
0.022
0.360
0.510
0.014
0.020
4.
4.700
3.430
0.135
4.300
4.700
0.169
0.185
1.270 TYP
0.050 TYP
2.440
2.640
0.096
0.104
14.100
14.500
0.555
0.571
1.600
0.063
0.000
0.380
0.000
0.015
/0).$$
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
4
Rev. - 2.0
/07DSHDQG5HHO
www.jscj-elec.com
5
Rev. - 2.0
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