JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
2SD1616A
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
FEATURE
Power dissipation
3. BSAE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
120
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
0.75
W
Thermal Resistance From Junction To Ambient
167
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 10μA , IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 2mA , IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
hFE1
VCE=2 V, IC= 100mA
135
hFE2
VCE=2 V,
81
DC current gain
IC= 1A
600
Collector-emitter saturation voltage *
VCE(sat)
IC= 1A, IB=50mA
0.3
V
Base-emitter saturation voltage *
VBE(sat)
IC= 1A, IB=50mA
1.2
V
0.7
V
VBE
Base-emitter voltage *
fT
Transition frequency
Output capacitance
Cob
Turn on time
ton
Storage time
tS
Fall time
tF
VCE= 2V, IC=50mA
0.6
VCE=2 V, IC= 100mA
100
MHz
VCB=10 V,IE= 0, f=1MHz
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
19
pF
0.07
μs
0.95
μs
0.07
μs
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICATION OF hFE1
Rank
Range
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L
K
U
135-270
200-400
300-600
1
E,Dec,2015
Typical Characteristics
Static Characteristic
VCE= 2V
o
Ta=100 C
hFE
0.4
1mA
DC CURRENT GAIN
COLLECTOR CURRENT
hFE —— IC
1000
COMMON
EMITTER
Ta=25℃
IC
(A)
0.5
0.9mA
0.3
0.8mA
0.7mA
0.6mA
0.2
0.5mA
o
Ta=25 C
100
0.4mA
0.1
0.3mA
0.2mA
IB=0.1mA
0.0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCE
10
10
1
VBEsat —— IC
1000
VCEsat ——
200
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
10
COLLECTOR CURRENT
(V)
800
Ta=25℃
600
400
Ta=100℃
100
IC
1000
(mA)
IC
β=20
150
Ta=100℃
100
Ta=25℃
50
200
0
0.1
0
1
10
100
COLLECTOR CURRENT
fT
——
400
COLLECTOR CURRENT
IC
Cob / Cib
1000
——
600
IC
800
1000
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
200
C
150
CAPACITANCE
TRANSITION FREQUENCY
200
100
(mA)
fT
(MHz)
250
IC
1000
100
100
Cib
Cob
10
50
VCE=2V
o
Ta=25 C
0
20
5
40
60
COLLECTOR CURRENT
80
IC
1
0.1
100
IC——VBE
1000
1
10
REVERSE VOLTAGE
(mA)
Pc
1200
——
V
20
(V)
Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
COLLECTOR CURRENT
IC (mA)
VCE=2V
100
o
Ta=25℃
Ta=100 C
10
1
1000
800
600
400
200
0.1
200
0
400
600
BASE-EMITTER VOLTAGE
www.cj-elec.com
800
1000
0
25
50
75
AMBIENT TEMPERATURE
VBE(mV)
2
100
Ta
125
150
(℃ )
E,Dec,2015
TO-92 Package Outline Dimensions
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.300
4.700
3.430
4.300
4.700
1.270 TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.169
0.185
0.135
0.169
0.185
0.050 TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015
TO-92 Suggested Pad Layout
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3
E,Dec,2015
TO-92 7DSHDQG5HHO
ZZZFMHOHFFRP4 E,Dec,2015
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