B0530W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B0520L W/B0530W/B0540W SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: B0520LW:SD B0530W: SE B0540W: SF Maximum Ratings @Ta=25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking V oltage VR RMS Reverse Voltage Reverse Voltage (DC) VR(RMS) Average Rectified Output Current Forward Current Surge Peak Voltage Rate of Change B0540W 20 30 40 V 14 21 28 V Unit 0.5 A IFSM 5.5 A PD 5  mW RθJA  ℃/W Tj 125 ℃ TSTG -55~+150 Junction Temperature Storage Temperature B0530W Io Power Dissipation Thermal Resistance Junction to Ambient B0520LW dv/dt ℃ 1000 V/μs Electrical Characteristics @Ta=25℃ Parameter Minimum reverse b reakdown voltage Forward voltage Reverse current Reverse current Capacitance between terminals Symbol B0520LW B0530W B0540W 20 -- -- -- 30 -- -- -- 40 IR=20μA VF1 0.32 0.375 -- IF=0.1A VF2 0.385 0.430 0.510 VF3 -- -- 0.62 IR1 75 -- -- IR2 -- 20 -- IR3 250 -- 10 IR4 -- 130 -- IR5 -- -- 20 CT -- -- 170 V(BR) Unit Test Conditions IR=250μA V V IR=200μA IF=0.5A IF=1A μA VR=10V VR=15V VR=20V μA VR=30V VR=40V pF VR=0,f=1MHz B,Jul,2012 B0530W Typical Characteristics 1 Forward Characteristics Reverse 1000 Characteristics o (uA) REVERSE CURRENT IR C 0.2 0.4 0.6 FORWARD VOLTAGE VF 500 400 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 10 100 (V) 10 15 20 VR 25 30 125 150 (V) Power Derating Curve 600 100 VR 5 REVERSE VOLTAGE Ta=25℃ REVERSE VOLTAGE 0 (V) Capacitance Characteristics 1 o Ta=25 C 1 0.1 1.0 f=1MHz 10 0.1 10 (mW) 1000 0.8 100 PD 0.01 0.0 o 0.1 T= a 2 5 FORWARD CURRENT IF T= a 1 00 o C (A) Ta=100 C 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) B,Jul,2012