CJ1012

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET V(BR)DSS ID RDS(on)MAX SOT-523 700mΩ@4.5V 20 V 3 500mA 850mΩ@2.5V 1. GATE General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). 2. SOURCE 3. DRAIN 1 2 FEATURE  High-Side Switching  Low On-Resistance  Low Threshold  Fast Switching Speed  ESD protected APPLICATIONS  Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers MARKING Equivalent Circuit C= Device Code Solid dot = Green molding compound device,if none, the normal device. Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source voltage VDSS 20 Gate-Source Voltage VGS ±12 Drain Current-Continuous ID(DC) 500 IDM(pulse) 1000 Unit V mA Drain Current -Pulsed(note1) 150 Power Dissipation (note 2 , Ta=25℃) mW PD 275 Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient RθJA 833 Thermal Resistance from Junction to Case RθJC 455 TJ,Tstg -55 ~+150 Operation Junction and Storage Temperature Range www.jscj-elec.com 1 ℃/W ℃ Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max 0.8 1.2 Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA 20 VGS(th) VDS =VGS, ID =250µA 0.45 Gate-Body Leakage Current IGSS VDS =0V, VGS =±4.5V ±1 µA Zero Gate Voltage Drain Current IDSS VDS =16V, VGS =0V 100 nA Gate-Threshold Voltage Drain-Source On-State Resistance RDS(on) Forward Transconductance gFS V VGS =4.5V, ID =600mA 250 700 VGS =2.5V, ID =500mA 330 850 VDS =10V, ID =400mA 1 mΩ S Dynamic Characteristics Input Capacitance (note 4) Ciss Output Capacitance (note 4) Coss Reverse Transfer Capacitance (note 4) Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 100 VDS =16V,VGS =0V,f =1MHz pF 16 12 750 VDS =10V,VGS =4.5V, ID =250mA nC 75 225 Switching Times (note 4) Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time 5 VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω tf 5 nS 25 11 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 5) VSD IS=0.15A, VGS = 0V 1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. This test is performed with infinite heat sink at Tc=25℃. 4.These parameters have no way to verify. 5. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Output Characteristics 5 Ta=25℃ Transfer Characteristics 500 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID ID (A) 3.5V DRAIN CURRENT DRAIN CURRENT 3 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 2.0 1.5 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS 3.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed RDS(ON) 400 VGS=2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) (mΩ) 500 300 VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 2 3 4 GATE TO SOURCE VOLTAGE (mA) VGS 5 (V) Threshold Voltage 0.85 Ta=25℃ Pulsed 0.80 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (mA) (V) 100 10 1 0.1 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 0.75 ID=250uA 0.70 0.65 0.60 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.0 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1  Dimensions In Millimeters Max. Min. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 6277DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0