CJK3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS ID RDS(on)MAX   30 V 32mΩ@10V  38mΩ@4.5V  SOT-23-3L 5.8A 45mΩ@2.5V   1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION z High dense cell design for extremely low RDS(ON) z Load/Power Switching z Exceptional on-resistance and maximum DC current capability z Interfacing Switching Equivalent Circuit MARKING Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A Power Dissipation PD 450 mW RθJA 313 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) www.cj-elec.com 1 C,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V 30 V 1 µA ±100 nA On characteristics (note 3) Drain-source on-resistance RDS(on) (note 3) Forward tranconductance gFS Gate threshold voltage Dynamic Characteristics VGS(th) 29 32 mΩ VGS =4.5V, ID =5A 32 38 mΩ VGS =2.5V,ID=4A 40 45 mΩ VDS =5V, ID =5A VDS =VGS, ID =250µA 8 0.7 S 0.9 1.4 V 1155 pF (note 4,5) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching Characteristics VGS =10V, ID =5.8A VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 108 pF 84 pF 3.6 Ω 5 ns (note 4,5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr VGS=10V,VDS=15V, 7 ns td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 ns 1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD IS=1A,VGS=0V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 C,Aug,2015 Typical Characteristics Output Characteristics Transfer Characteristics 20 14 Ta=25℃ Pulsed 18 VDS=3V VGS=3V,4V,5V,6V Pulsed 12 10 ID (A) 14 12 DRAIN CURRENT ID DRAIN CURRENT (A) 16 VGS=2V 10 8 6 4 VGS=1.5V Ta=25℃ Ta=100℃ 8 6 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 0.5 (V) 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE 2.5 VGS RDS(ON) —— VGS RDS(ON) —— ID 35 150 Pulsed Ta=25℃ Pulsed VGS=2.5V ID=5A (m) 125 (m) RDS(ON) 30 VGS=4.5V ON-RESISTANCE RDS(ON) ON-RESISTANCE 3.0 (V) 25 VGS=10V 100 75 Ta=100℃ 50 25 Ta=25℃ 20 1 2 3 4 DRAIN CURRENT 5 ID 0 6 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 7 1.4 Pulsed VTH 1 Ta=75℃ Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.2 Ta=25℃ 0.1 1.0 ID=250uA 0.8 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE 1.4 VSD (V) 1.6 1.8 0.0 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ )  3 C,Aug,2015      Symbol A A1 A2 b c D E1 E e e1 L  Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8°     ZZZFMHOHFFRP4 C,Aug,2015      ZZZFMHOHFFRP5C,Aug,2015