CJW1012

JIANGSU CHANGJING CHANGJIANGELECTRONICS ELECTRONICSTECHNOLOGY TECHNOLOGYCO., CO.,LTD LTD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFET V(BR)DSS ID RDS(on)MAX SOT-323 700mΩ@4.5V 20 V 500mA 850mΩ@2.5V   3 1. GATE 2. SOURCE GENERRAL DESCRIPTION This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). 3. DRAIN 1 2 FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed z ESD protected APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source voltage VDSS 20 Gate-Source Voltage VGS ±12 Drain Current-Continuous ID(DC) 500 IDM(pulse) 1000 Unit V mA Drain Current -Pulsed(note1) 150 Power Dissipation (note 2 , Ta=25℃) mW PD 275 Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient RθJA 833 Thermal Resistance from Junction to Case RθJC 455 Storage Temperature Tj 150 Junction Temperature Tstg -55 ~+150 www.jscj-elec.com 1 ℃/W ℃ Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA 20 VGS(th) VDS =VGS, ID =250µA 0.45 Gate-Body Leakage Current IGSS VDS =0V, VGS =±4.5V ±1 µA Zero Gate Voltage Drain Current IDSS VDS =16V, VGS =0V 100 nA Gate-Threshold Voltage Drain-Source On-State Resistance RDS(on) Forward Transconductance gFS 1.2 VGS =4.5V, ID =600mA 250 700 VGS =2.5V, ID =500mA 325 850 VDS =10V, ID =400mA 1 V mΩ S Dynamic Characteristics Input Capacitance (note 4) Ciss Output Capacitance (note 4) Coss Reverse Transfer Capacitance (note 4) Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 100 VDS =16V,VGS =0V,f =1MHz pF 16 12 VDS =10V,VGS =4.5V, ID =250mA 750 nC 75 225 Switching Times (note 4) Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 5 5 nS 25 11 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 5) VSD IS=0.15A, VGS = 0V 1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. This test is performed with infinite heat sink at Tc=25℃. 4.These parameters have no way to verify. 5. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 5 Ta=25℃ Transfer Characteristics 500 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS 3.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 ON-RESISTANCE VGS=2.5V VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 2 3 4 GATE TO SOURCE VOLTAGE (mA) VGS 5 (V) Threshold Voltage 0.90 Ta=25℃ Pulsed 0.85 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (mA) (V) 100 10 1 0.1 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.0 0.80 ID=250uA 0.75 0.70 0.65 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1  Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 6277DSHDQG5HHO SOT-323 Tape and reel SOT-323 Embossed Carrier Tape P0 d P1 Packaging Description: SOT-323 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). E C B F W A P A A A-A Dimensions are in millimeter Pkg type A B C d E F P0 P P1 W SOT-323 2.25 2.55 1.19 Ø1.55 1.75 3.50 4.00 4.00 2.00 8.00 SOT-323 Tape Leader and Trailer Trailer Tape 50±2 Empty Pockets Leader Tape 100±2 Empty Pockets Components SOT-323 Reel D I G W2 3000 H 2500 2000 1500 1000 D2 D1 500 W1 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 G.W.(kg) REEL 3000 pcs www.jscj-elec.com Reel Size Box 7 inch 30,000 pcs Box Size(mm) Carton Carton Size(mm) 203×203×195 120,000 pcs 438×438×220 5 Rev. - 1.0