JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2LK Plastic-Encapsulate Thyristors
CT304D
3Q TRIACs
MAIN CHARACTERISTICS
4A
IT(RMS)
VDRM/VRRM
CT304D-600T/S
600V
CT304D-800T/S
800V
1.55V
VTM
TO-252-2LK
1.MAIN TERMINAL 1
2.MAIN TERMINAL 2
3.GATE
FEATURES
NPNPN 5-layer Structure TRIACs
Mesa Glass Passivated Technology
Multi Layers Metal Electrodes
High Junction Temperature
Good Commutation Performance
High dV/dt and dI/dt
APPLICATIONS
MARKING
Heater Control
CT304D:Series Code
Motor Speed Controller
600S:Depends on VDRM
Mixer
and IGT
XXX:Internal Code
ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Test condition
Value
Unit
CT304D-600T/S
600
V
CT304D-800T/S
800
V
4
A
Repetitive peak offstate voltage
Tj=25℃
IT(RMS)
RMS on-state current
TO-252-2LK(TC≤110℃),Fig. 1,2
ITSM
Non repetitive surge
peak on-state current
Full sine wave ,Tj(init)=25℃,
tp=20ms; Fig. 3,5
40
A
I2t value
tp=10ms
8
A2s
Critical rate of rise of
on-state current
IG=2*IGT, tr≤10ns, F=120HZ,
Tj=125℃
Peak gate current
tp=20µs, Tj=125℃
4
A
PG(AV)
Average gate power
Tj=125℃
1
W
TSTG
Storage temperature
-40~+150
Operating junction
temperature
-40~+125
VDRM/ VRRM
I2t
dIT/dt
IGM
Tj
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1
Ⅰ-Ⅱ-Ⅲ
Ⅳ
50
n/a
A/μs
℃
Rev. - 1.0
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Test condition
Value
Unit
Symbol
Parameter
IGT
Gate trigger current
VD=12V,
I T =1A,
Ⅰ-Ⅱ-Ⅲ
Ⅳ
VGT
Gate trigger voltage
Tj=25℃,
Fig. 6
Ⅰ-Ⅱ-Ⅲ
≤1.3
V
VGD
Non-triggering gate
voltage
VD=VDRM, Tj=125℃
≥0.2
V
IH
Holding current
VD=12V,
I GT =0.1A,
IL
Latching current
Tj=25℃,
Fig. 6
dVD/dt
Critical rate of rise
of off-state
VD=67%VDRM, Gate
Open Tj=125℃
VTM
On-state Voltage
ITM=6A,tp=380μs ,
Fig. 4
IDRM / IRRM
Repetitive peak offstate current
T
S
≤5
≤10
n/a
n/a
mA
Ⅰ-Ⅱ-Ⅲ
≤10
≤15
mA
Ⅰ-Ⅲ
≤10
≤25
mA
Ⅱ
≤15
≤30
mA
≥20
≥40
V/μs
≤1.55
V
VD=VDRM/VRRM, Tj=25℃
≤5
≤5
μA
VD=VDRM/VRRM,Tj=125℃
≤1
≤1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case (AC)
TO-252-2LK
2.6
℃/W
Rth (j-a)
Junction to ambient
TO-252-2LK
70
℃/W
PART NUMBER
CT 3
04
D
TRIACs
-600
T
T:IGT1-3≤5mA
S:IGT1-3≤10mA
3 Quadrant
Repetitive peak off-state voltage
600:≥ 600V
IT(RMS)=4A
800:≥ 800V
Package Type
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2
Rev. - 1.0
CHARACTERISTICS CURVES
FIG.2: RMS on-state current versus case temperature
(full cycle)
I T(RMS) (A)
P(W)
FIG.1: Maximum power dissipation versus RMS
on-state current (full cycle)
6
5
5
4
4
3
3
2
2
1
1
0
0
1
2
3
0
-50
4
I T(RMS) (A)
0
100
Tc
150
)
FIG.4: On-state characteristics (maximum values)
I TM (A)
I TMS (A)
FIG.3: Surge peak on-state current versus number of cycles
50
40
30
Tj=125ºC
10
30
20
1
10
0
Tj=25ºC
0
0
10
100
1000
Number of cycles
0.5
1.0
2.0
3.0
4.0
5.0
V TM (V)
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
)
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
2.5
I GT,I H,I L(T) / I GT,I H,I L(T=25
I TMS (A)
1000
2.0
100
IGT
1.5
IH&IL
1.0
10
0.5
0.0
-40
1
0.01
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0.1
1
10
tp(ms)
-20
0
20
40
60
80
100
120
140
Tj
3
)
Rev. - 1.0
TO-252-2LK
http://www.jscj-elec.com/
4
Rev. - 1.0
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