D882H

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) SOT-89-3L FEATURE  Low VCE(sat)  Large current capacity 1. BASE 2. COLLECTOR 3. EMITTER MAKING: D882H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current 3 A PC Collector Power Dissipation 500 mW Thermal Resistance from Junction to Ambient 250 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = IC=100µA, IE 0 V(BR)CBO 70 V Collector-emitter breakdown voltage = IC=10mA, IB 0 V(BR)CEO 70 V Emitter-base breakdown voltage = IE=100µA, IC 0 V(BR)EBO 6 V Collector cut-off current = VCB=40V, IE 0 ICBO 1 µA Collector cut-off current = VCE=30V, IB 0 ICEO 10 µA 1 µA = VEB=6V, IC 0 IEBO Emitter cut-off current = VCE=2V, IC 1A hFE DC current gain 60 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage = IC=2A, IB 0.2A VBE(sat) 1.5 V fT Transition frequency V= = CE=5V,I C 0.1A,f 10MHz 50 MHz CLASSIFICATION of hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.cj-elec.com 1 B D,Nov,2015 Typical Characteristics Static Characteristic 7.2mA 6.4mA —— IC Ta=100℃ 5.6mA 4.8mA 4mA IC 8mA hFE COMMON EMITTER Ta=25℃ 1600 COLLECTOR CURRENT hFE 1000 DC CURRENT GAIN (mA) 2000 1200 3.2mA 800 2.4mA Ta=25℃ 100 1.6mA 400 VCE= 2V IB=0.8mA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 1 10 100 COLLECTOR CURRENT (V) IC VBEsat —— 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 VCE 10 8 100 Ta=100 ℃ 10 Ta=25℃ (mA) IC 1000 Ta=25℃ Ta=100 ℃ β=10 β=10 1 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) VBE 1000 Cob/Cib —— 1000 IC VCB/VEB f=1MHz IE=0/IC=0 (pF) (mA) Ta=25 ℃ Cib 100 CAPACITANCE 100 T= a 25 ℃ T= a 10 0℃ C IC COLLECTOR CURRENT 3000 (mA) 1000 10 COMMON EMITTER VCE= 2V 1 200 400 600 800 1000 PC 600 —— Cob 10 1 0.1 1200 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR POWER DISSIPATION PC (mW) 3000 1000 IC 10 V 20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 B D,Nov,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 3 B D,Nov,2015 SOT-89-3L Tape and Reel www.cj-elec.com 4 B D,Nov,2015