MJD32C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD32C TO-252-2L TRANSISTOR (PNP) FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) z Straight Lead Version in Plastic Sleeves (“–1” Suffix) z Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) z Electrically Similar to Popular TIP31 and TIP32 Series 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ Symbol Parameter VCBO ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA, IE=0 -100 V Collector-emitter breakdown voltage * VCEO(sus) IC= -30mA, IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current ICES VCE=-100V, VEB=0 -20 μA Collector cut-off current ICEO VCE= -60V, IB= 0 -50 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 mA hFE(1) VCE= -4V, IC=-1A 25 hFE(2) VCE=-4 V, IC=-3A 15 DC current gain 75 Collector-emitter saturation voltage VCE(sat) IC=-3A, IB=-0.375A -1.2 V Base-emitter voltage VBE(on) VCE= -4V, IC=-3A -1.8 V Transition frequency fT VCE=-10V , IC=-0.5A,fT=1KHz 3 MHZ * Pulse Test: PW≤300µs, Duty Cycle≤2%. www.cj-elec.com 1 E,Nov,2014 Typical Characteristics Static Characteristic -4.0 -90mA -80mA -70mA -60mA IC COLLECTOR CURRENT -2.5 hFE -100mA -3.0 DC CURRENT GAIN (A) VCE= -4V COMMON EMITTER Ta=25℃ -3.5 -50mA -40mA -2.0 -30mA -1.5 -20mA -1.0 150 o Ta=100 C 100 o Ta=25 C 50 IB=-10mA -0.5 -0.0 0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE -7 -8 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ -0.8 -0.6 -0.4 Ta=100℃ -0.2 -100 VCEsat —— -600 β=8 -1.0 -10 COLLECTOR CURRENT (V) VBEsat —— IC -1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) hFE —— IC 200 IC (mA) -3000 -1000 IC β=8 -500 -400 -300 -200 Ta=100℃ -100 Ta=25℃ -0.0 -1 -10 -100 COLLECTOR CURRENT fT —— -10 -100 COLLECTOR CURRENT IC Cob / Cib 1000 —— -3000 -1000 IC (mA) VCB / VEB Cib (pF) 12 f=1MHz IE=0 / IC=0 o Ta=25 C C 9 CAPACITANCE TRANSITION FREQUENCY -1 (mA) fT (MHz) 15 IC -0 -3000 -1000 6 100 Cob 3 VCE=-10V o Ta=25 C 0 0 100 200 300 COLLECTOR CURRENT IC —— 400 IC 10 -0.1 500 (mA) VBE COLLECTOR POWER DISSIPATION Pc (W) -1000 IC (mA) Pc 1.50 -3000 o Ta=100 C -100 COLLECTOR CURRENT -1 -10 REVERSE VOLTAGE -10 Ta=25℃ -1 —— V -20 (V) Ta 1.25 1.00 0.75 0.50 0.25 VCE=-4V -0.1 -0.2 0.00 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE www.cj-elec.com -1.0 -1.2 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2 100 Ta 125 150 (℃ ) E,Nov,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   E,Nov,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 E,Nov,2014