JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
JC(T
MMBT2907A
SOT-23
TRANSISTOR (PNP)
FEATURES
z Epitaxial planar die construction
z Complementary NPN Type available(MMBT2222A)
1. BASE
2. EMITTER
Marking: 2F
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-600
mA
PD
Total Device Dissipation
250
mW
RθJA
Thermal Resistance Junction to Ambient
500
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC=-10mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-20
nA
Base cut-off current
IEBO
VEB=-3V, IC =0
-10
nA
Collector cut-off current
ICEX
VCE=-30 V, VBE(off) =-0.5V
-50
nA
hFE(1)
VCE=-10V,IC=-150mA
100
hFE(2)
VCE=-10V,IC=-0.1mA
75
hFE(3)
VCE=-10V,IC=-1mA
100
hFE(4)
VCE=-10V,IC=-10mA
100
hFE(5)
VCE=-10V,IC=-500mA
50
VCE(sat)*
IC=-150mA,IB=-15mA
-0.4
V
VCE(sat)*
IC=-500mA,IB=-50mA
-1.6
V
VBE(sat)*
IC=-150mA,IB=-15mA
-1.3
V
VBE(sat)*
IC=-500mA,IB=-50mA
-2.6
V
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
fT
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
VCE=-20V,IC=-50mA,f=100MHz
VCE=-30V,IC=-150mA,B1=-15mA
VCE=-6V,IC=-150mA,
IB1=- IB2=- 15mA
300
200
MHz
10
ns
25
ns
225
ns
60
ns
*Pulse test: tp≤300μs, δ≤0.02.
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1
D,Oct,2014
A,Jun,2014
Typical Characteristics
hFE
Static Characteristic
-0.25
500
—— IC
COMMON EMITTER
VCE=-10V
-800uA
-0.20
hFE
-640uA
-0.15
DC CURRENT GAIN
COLLECTOR CURRENT
400
-720uA
IC
(A)
COMMON EMITTER
Ta=25℃
-560uA
-480uA
-0.10
-400uA
-320uA
-240uA
-0.05
300
Ta=100℃
Ta=25℃
200
100
-160uA
IB=-80uA
-0.00
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
-0.9
——
-10
VCE
0
-0.1
-12
-10
COLLECTOR CURRENT
IC
VBEsat
-1.2
β=10
-100
IC
-0.6
Ta=100℃
-0.3
Ta=25℃
-0.0
—— IC
Ta=25℃
-0.8
Ta=100℃
-0.4
-0.0
-1
-10
-100
COLLECTOR CURRENT
IC
IC
-1
-600
(mA)
-10
-100
COLLECTOR CURRENT
—— VBE
100
-600
Cob/ Cib
IC
—— VCB/ VEB
f=1MHz
IE=0/ IC=0
(pF)
IC
(mA)
Ta=25℃
Cib
-100
CAPACITANCE
Ta=25℃
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
Pc
——
10
1
-0.1
-1.0
BASE-EMMITER VOLTAGE VBE (V)
300
Cob
C
Ta=100℃
-10
-600
(mA)
COMMON EMITTER
VCE=-10V
COLLECTOR CURRENT
-600
(mA)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-1
(V)
-1
REVERSE VOLTAGE
-10
V
-20
(V)
Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
250
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
150
(℃ )
2
D,Oct,2014
A,Jun,2014
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
SOT-23 Suggested Pad Layout
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3
D,Oct,2014
A,Jun,2014
SOT-23 Tape and Reel
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4
D,Oct,2014
A,Jun,2014
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