MMBT3904M

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT3904M SOT-723 TRANSISTOR (NPN) FEATURE  Complementary to MMBT3906M  Small Package MARKING: 1N 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Power Dissipation 0.1 W 1250 ℃/W -55~+150 ℃ RΘJA Thermal Resistance from Junction to Ambient TJ,Tstg Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICEX VCE=30V,VEB(off)=3V 50 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA hFE(1) VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 60 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency hFE(4) VCE=1V,IC=50mA VCE(sat)1 IC=10mA,IB=1mA 0.2 V VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.85 V VBE(sat)2 IC=50mA,IB=5mA 0.95 V fT VCE=20V,IC=10mA,f=100MHz Output capacitance Cob VCB=5V,IE=0,f=1MHz Input capacitance Cib Noise figure NF Delay time td Rise time tr Storage time ts Fall time tf www.jscj-elec.com 300 0.65 300 MHz VEB=0.5V,IC=0,f=1MHz 4 8 pF VCE=5V,IC=0.1mA,f=1MHz,RS=1kΩ 5 dB VCC=3V,VBE(off)=-0.5V, IC=10mA,IB1=1mA 35 ns 35 ns VCC=3V,IC=10mA IB1=IB2=1mA 200 ns 50 ns 1 pF Rev. - 2.0 Typical Characteristics Static Characteristic hFE DC CURRENT GAIN COLLECTOR CURRENT 350uA 300uA 250uA 200uA 40 —— IC COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 60 hFE 400 500uA 450uA 80 IC (mA) 100 150uA Ta=100℃ 300 Ta=25℃ 200 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 0 0.1 20 Ta=100℃ 100 Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 0.0 1 10 3 IC 100 100 30 COLLECTOR CURRENT IC 200 1 10 3 (mA) 100 30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB (mA) 10 f=1MHz IE=0/IC=0 Ta=25℃ Cib C (pF) Ta=100℃ CAPACITANCE COLLECTOR CURRENT IC COMMON EMITTER VCE=1V 30 300 (mA) 3 Ta=25℃ 1 3 Cob 0.3 0.1 0.2 0.4 0.6 0.8 1.0 1 0.1 1.2 fT —— IC PC 200 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) 300 1 0.3 —— V 20 (V) Ta VCE=20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 200 100 150 100 50 0 1 3 10 COLLECTOR CURRENT www.jscj-elec.com 30 IC 0 60 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-723 Package Outline Dimensions Symbol A A1 b b1 c D E E1 e θ Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. SOT-723 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-723 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0