PMBFJ177,215

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 3 handbook, halfpage d g s PINNING 1 2 1 = drain Top view 2 = source MAM386 3 = gate Note 1. Drain and source are interchangeable. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y Fig.1 Simplified outline and symbol, SOT23. QUICK REFERENCE DATA Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current −IG max. 50 mA Ptot max. Total power dissipation up to Tamb = 25 °C Drain current −VDS = 15 V; VGS = 0 300 mW PMBFJ174 175 176 −IDSS > < 20 135 7 70 2 35 RDS on < 85 125 250 177 1,5 mA 20 mA Drain-source ON-resistance −VDS = 0,1 V; VGS = 0 April 1995 2 300 Ω Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate-drain voltage VGDO max. 30 V Gate current (d.c.) −IG max. 50 mA Ptot max. Total power dissipation up to Tamb = 25 °C(1) Storage temperature range Tstg Junction temperature Tj Rth j-a 300 mW −65 to + 150 °C max. 150 °C = 430 K/W THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified PMBFJ174 175 176 177 Gate cut-off current VGS = 20 V; VDS = 0 IGSS < 1 1 1 1 nA −IDSX < 1 1 1 1 nA −IDSS > < 20 135 7 70 2 35 1,5 mA 20 mA V(BR)GSS > 30 30 30 30 V VGS off > < 5 10 3 6 RDS on < 85 125 Drain cut-off current −VDS = 15 V; VGS = 10 V Drain current −VDS = 15 V; VGS = 0 Gate-source breakdown voltage IG = 1 µA; VDS = 0 Gate-source cut-off voltage −ID = 10 nA; VDS = −15 V 1 0,8 V 4 2,25 V Drain-source ON-resistance −VDS = 0,1 V; VGS = 0 Note 1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm. April 1995 3 250 300 Ω Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Cis typ. 8 pF VGS = VDS = 0 Cis typ. 30 pF Crs typ. 4 pF Feedback capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Switching times (see Fig.2 + 3) PMBFJ174 175 176 177 Delay time td typ. 2 5 15 20 ns Rise time tr typ. 5 10 20 25 ns Turn-on time ton typ. 7 15 35 45 ns Storage temperature ts typ. 5 10 15 20 ns Fall time tf typ. 10 20 20 25 ns Turn-off time toff typ. 15 30 35 45 ns −VDD 10 6 6 6 V VGS off 12 8 6 3 V 560 1200 2000 2900 Ω 0 0 0 0 V Test conditions: RL VGS on VGSoff −VDD handbook, halfpage 90% INPUT 50 Ω 10% Vout RL 10% 10% OUTPUT Vin D.U.T 90% 50 Ω 90% tr tf ts td MBK292 Rise time input voltage < 1 ns Fig.3 Input and output waveforms td + tr = ton ts + tf = toff Fig.2 Switching times test circuit April 1995 4 MBK293 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6