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PUMH7,115

PUMH7,115

  • 厂商:

    RUBYCON(红宝石)

  • 封装:

    SOT-323-6

  • 描述:

    SOT-363 Bipolar Transistors - BJT ROHS

  • 数据手册
  • 价格&库存
PUMH7,115 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET PEMH7; PUMH7 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product data sheet Supersedes data of 2001 Oct 22 2003 Oct 02 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES PEMH7; PUMH7 QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplified circuit design VCEO TYP. MAX. UNIT collector-emitter voltage − 50 V IO output current (DC) − 100 mA TR1 NPN − − − APPLICATIONS TR2 NPN − − − • Low current peripheral driver R1 bias resistor 4.7 − kΩ • Replacement of general purpose transistors in digital applications R2 bias resistor open − − • Reduction of component count • Reduced pick and place costs. PARAMETER • Control of IC inputs. DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE PHILIPS NPN/PNP COMPLEMENT MARKING CODE(1) TYPE NUMBER EIAJ PNP/PNP COMPLEMENT PEMH7 SOT666 − H3 PEMD6 PEMB3 PUMH7 SOT363 SC-88 H*7 PUMD6 PUMB3 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PEMH7 PUMH7 handbook, halfpage 6 5 6 4 5 4 R1 TR2 TR1 R1 1 Top view 2003 Oct 02 2 3 1 MAM453 2 2 3 DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMH7; PUMH7 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PEMH7 − Plastic surface mounted package; 6 leads SOT666 PUMH7 − Plastic surface mounted package; 6 leads SOT363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 200 mW SOT666 notes 1 and 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 300 mW SOT666 notes 1 and 2 − 300 mW Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2003 Oct 02 3 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMH7; PUMH7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth j-a Tamb ≤ 25 °C thermal resistance from junction to ambient SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W Per device Rth j-a Tamb ≤ 25 °C thermal resistance from junction to ambient SOT363 note 1 416 K/W SOT666 notes 1 and 2 416 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 μA VCE = 30 V; IB = 0; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 200 330 − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV R1 input resistor 3.3 4.7 6.1 kΩ Cc collector capacitance − − 2.5 pF 2003 Oct 02 VCB = 10 V; IE = ie = 0; f = 1 MHz 4 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMH7; PUMH7 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 Oct 02 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMH7; PUMH7 Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 Oct 02 REFERENCES IEC JEDEC EIAJ SC-88 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMH7; PUMH7 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Oct 02 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp8 Date of release: 2003 Oct 02 Document order number: 9397 750 11873
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