PUMH9,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PEMH9; PIMH9; PUMH9 NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package JEITA PNP/PNP complement NPN/PNP complement Package configuration NXP PEMH9 SOT666 - PEMB9 PEMD9 ultra small and flat lead PIMH9 SOT457 SC-74 - - small PUMH9 SOT363 SC-88 PUMB9 PUMD9 very small 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit open base - - 50 V Per transistor VCEO collector-emitter voltage IO output current - - 100 mA R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 3.7 4.7 5.7 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 Graphic symbol 6 4 5 R1 4 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 sym063 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PEMH9 - plastic surface-mounted package; 6 leads SOT666 PIMH9 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 PUMH9 SC-88 plastic surface-mounted package; 6 leads SOT363 Table 5. Marking codes 4. Marking Type number Marking code[1] PEMH9 H9 PIMH9 H9 PUMH9 H*9 [1] PEMH9_PIMH9_PUMH9 Product data sheet * = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 2 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 6 V VI input voltage positive - +40 V negative - 6 V IO output current - 100 mA ICM peak collector current single pulse; tp  1 ms - 100 mA Ptot total power dissipation Tamb  25 C - 200 mW 250 mW PEMH9 (SOT666) [1] PIMH9 (SOT457) [1] PUMH9 (SOT363) [1] - 200 mW PEMH9 (SOT666) [1] - 300 mW PIMH9 (SOT457) [1] PUMH9 (SOT363) [1] Per device total power dissipation Ptot Product data sheet 400 mW - 300 mW Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] PEMH9_PIMH9_PUMH9 Tamb  25 C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 3 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac766 500 Ptot (mW) (1) 400 (2) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT457; FR4 PCB, standard footprint (2) SOT363 and SOT666; FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air PEMH9 (SOT666) [1] - - 625 K/W PIMH9 (SOT457) [1] - - 500 K/W PUMH9 (SOT363) [1] - - 625 K/W PEMH9 (SOT666) [1] - - 417 K/W PIMH9 (SOT457) [1] - - 313 K/W PUMH9 (SOT363) [1] - - 417 K/W Per device Rth(j-a) [1] PEMH9_PIMH9_PUMH9 Product data sheet thermal resistance from junction to ambient in free air Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 4 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMH9 (SOT666); typical values 006aac767 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PIMH9 (SOT457); typical values PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 5 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PUMH9 (SOT363); typical values PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 6 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor PEMH9_PIMH9_PUMH9 Product data sheet ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off VCE = 30 V; IB = 0 A current VCE = 30 V; IB = 0 A; Tj = 150 C - - 100 nA - - 5 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 150 A hFE DC current gain VCE = 5 V; IC = 5 mA 100 - - VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 0.7 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 - V k R1 bias resistor 1 (input) 7 10 13 R2/R1 bias resistor ratio 3.7 4.7 5.7 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz [1] Characteristics of built-in transistor All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 [1] © NXP B.V. 2013. All rights reserved. 7 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac784 103 006aac785 1 (1) hFE (2) VCEsat (V) (3) 102 (1) 10-1 (2) (3) 10 1 10-1 1 102 10 10-2 10-1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 5. DC current gain as a function of collector current; typical values Fig 6. 006aac786 10 VI(on) (V) Collector-emitter saturation voltage as a function of collector current; typical values 006aac787 10 VI(off) (V) (1) 1 (1) 1 (2) (2) (3) 10-1 10-1 1 (3) 102 10 10-1 10-1 IC (mA) VCE = 0.3 V (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C On-state input voltage as a function of collector current; typical values Product data sheet 10 VCE = 5 V (1) Tamb = 40 C PEMH9_PIMH9_PUMH9 1 IC (mA) (1) Tamb = 40 C Fig 7. 102 10 IC (mA) Fig 8. Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 8 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac788 3 Cc (pF) 006aac757 103 fT (MHz) 2 102 1 0 0 10 20 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C Fig 9. 10 10-1 1 102 10 IC (mA) VCE = 5 V; Tamb = 25 C Collector capacitance as a function of collector-base voltage; typical values Fig 10. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 9 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 9. Package outline 1.7 1.5 6 3.1 2.7 0.6 0.5 5 6 4 1.1 0.9 5 4 2 3 0.6 0.2 0.3 0.1 1.7 1.5 3.0 2.5 1.3 1.1 1.7 1.3 pin 1 index 1 2 1 3 0.18 0.08 0.27 0.17 0.5 pin 1 index 0.40 0.25 0.95 1 0.26 0.10 1.9 Dimensions in mm Dimensions in mm 04-11-08 Fig 11. Package outline PEMH9 (SOT666) 04-11-08 Fig 12. Package outline PIMH9 (SOT457) 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 13. Package outline PUMH9 (SOT363) PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 10 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 14. Reflow soldering footprint PIMH9 (SOT457) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 15. Wave soldering footprint PIMH9 (SOT457) PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 11 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 16. Reflow soldering footprint PUMH9 (SOT363) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 17. Wave soldering footprint PUMH9 (SOT363) PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 12 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 18. Reflow soldering footprint PEMH9 (SOT666) PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 13 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMH9_PIMH9_PUMH9 v.5 20131112 Product data sheet - PIMH9_PUMH9_PEMH9 v.4 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1 “Product profile”: updated Section 4 “Marking”: updated Figure 1 to 10: added Section 5 “Limiting values”: updated Section 6 “Thermal characteristics”: updated Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to VI(off) off-state input voltage, ICEO updated, fT added • • • • Section 8 “Test information”: added Section 9 “Package outline”: superseded by minimized package outline drawings Section 10 “Soldering”: added Section 12 “Legal information”: updated PIMH9_PUMH9_PEMH9 v.4 20040414 Product data sheet PIMH9_PUMH9_PEMH9 v.3 20030915 Product specification PEMH9_PIMH9_PUMH9 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 PIMH9_PUMH9_PEMH9 v.3 - © NXP B.V. 2013. All rights reserved. 14 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PEMH9_PIMH9_PUMH9 Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 15 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 12.4 Trademarks Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PEMH9_PIMH9_PUMH9 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 12 November 2013 © NXP B.V. 2013. All rights reserved. 16 of 17 PEMH9; PIMH9; PUMH9 NXP Semiconductors NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 November 2013 Document identifier: PEMH9_PIMH9_PUMH9